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US 4,482,907 AGranted
Planar-type field-effect transistor having metallized-well electrodes and a method of fabrication of said transistor
AssigneeThomson-CSF
InventorPaul R. Jay
Life of this patent
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Abstract
A field-effect transistor having a gate consisting of a metallic plane projecting metallized wells of less than one micron in diameter through the channel layer downwards to the semiconductor substrate. They are formed by ion-beam etching. Metallization is performed by cathodic sputtering of a substance which forms a Schottky contact with the semiconductor. The wells are spaced at intervals of less than one micron so as to form a row and are joined together by means of a gate electrode.
Claims6
A planar field-effect transistor comprising:
- a semiconductor substrate;
- an active semiconductor layer arranged on said substrate;
- a source electrode located on said active layer;
- a drain electrode located on said active layer;
- at least one gate electrode having a first portion arranged on said active layer and a second portion formed as a plurality of metallized wells arranged in a row in a plane normal to the direction of the drainsource current, each of said wells extending downwardly from said first portion through said active layer and into said substrate.
2 more elements
Dependencies are inferred from the claim text.