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US 4,481,178 AGranted
Purification of chlorosilanes
AssigneeGeneral Electric Company
InventorWilliam D. Kray
Life of this patent
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Abstract
A method for the selective removal of phosphorus and other Lewis base-type impurities from chlorosilane solutions with selected transition metal compounds which react with the impurities and allow subsequent distillation of chlorosilane which is virtually free from contamination within extremely low limits of detectability.
Claims10
A method for purifying chlorosilanes selected from the group consisting of silicon tetrachloride, trichlorosilane, dichlorosilane, and mixtures thereof comprising:
- (A) adding to a solution of chlorosilane contaminated with Lewis base impurities a 2-fold to 50-fold molar excess, based on the concentration of impurities, of a transition metal compound;
- (B) heating the solution at temperatures below about 150.degree. C. until formation of thermally stable complexes between said impurities and said transition metal compound occurs, under sufficient pressures to prevent distillation of the chlorosilane;
- and
- (C) removing purified chlorosilane from the solution by distillation at temperatures below about 200.degree. C. and at pressures such that the distillation conditions do not cause decomposition of said stable complexes.
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A method for producing trichlorosilane substantially free of phorphorus impurities from high purity trichlorosilane solutions comprising:
- (A) adding to a solution of trichlorosilane containing small amounts of phosphorus impurities a 2-fold to 50-fold molar excess, based on the concentration of the impurities, of a transition metal compound selected from the group consisting of molybdenum dichloride dioxide and anhydrous convalent nickel compounds;
- (B) heating the solution at temperatures below about 150.degree. C. until said impurities and said transition metal compound form thermally stable complexes, under pressures sufficient to prevent distillation of the trichlorosilane;
- and
- (C) removing purified trichlorosilane from the solution by distillation at temperatures below about 200.degree. C. and at pressures such that the distillation does not cause decomposition of said stable complexes.
1 more element
Dependencies are inferred from the claim text.