Method for production of magnetic bubble memory device
AssigneeHitachi, Ltd.
InventorsRyo Imura, Tadashi Ikeda, Norio Ohta, Teruaki Takeuchi, Yutaka Sugita
Life of this patent
Estimating the term…
Abstract
Hydrogen ion is implanted twice or more at different acceleration voltages into desired portions of a magnetic film holding magnetic bubbles to form a magnetic bubble propagation path. This ensures production of an ion-implanted device having a sufficiently large anisotropic magnetic field parallel to the magnetic film and a high Curie temperature.
Claims13
A method for production of a magnetic bubble memory device comprising:
- implanting hydrogen ion twice or more at different acceleration voltages into predetermined portions of a magnetic film, and heat treating the magnetic film having hydrogen ion implanted therein.
A method for production of a magnetic bubble memory device comprising implanting only hydrogen ion twice or more at different acceleration voltages into predetermined portions of a magnetic film, whereby the Curie temperature Tc of the ion-implanted layer is high as compared with the Curie temperature Tc when implanting at least one of Ne.sup.+ or He.sup.+ in combination with hydrogen ion.
Dependencies are inferred from the claim text.