# US 4,473,836 A · Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 4,473,836 A - Document ID: US4473836A - Status: Granted - Kind: A - Application number: 06/373,972 - Filed: 1982-05-03 - Granted: 1984-09-25 - Earliest claimed: 1982-05-03 - Assignees: Dalsa, Inc. - Inventors: Savvas G. Chamberlain - Web page: https://patentgrep.com/patent/US4473836A ## CPC - H10F 30/282: Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract An integrable photodetector element of large dynamic range includes a silicon substrate which has a resistivity of between 1 and 100 ohm-cm. The substrate is of one conductivity type. In the substrate there is an electrically floating photosensitive diffusion region and a second diffusion region that is spaced apart from the electrically floating region by means of a channel in the substrate. The two diffusion regions are of the same conductivity type and of opposite conductivity type to that of the substrate. A metal-insulator-semiconductor gate spans the substrate between the regions and over the channel. The gate is electrically connected to the electrically floating region, and the second region is reverse biased with respect to the substrate. Except for the photosensitive diffusion region, the element is shielded against penetration by visible light. The length of the channel between the regions, the resistivity of the substrate, the magnitude of the reverse bias and the depth of the diffusion regions is selected so that the potential barrier between the electrically floating region and the channel is low enough that electrons which are photogenerated in response to visible light impinging on the electrically floating region can be injected therefrom into the channel to be collected by the second diffusion region. As a result of this the voltage of the electrically floating region varies logarithmically with changes in visible light incident thereon. ## Claims ### Claim 1 An integrable photodetector element having a large dynamic range comprising a silicon substrate having a resistivity of between 1 and 100 ohm-cm and being of one conductivity type; an electrically floating photosensitive diffusion region in said substrate; a second diffusion region in said substrate spaced apart from said electrically floating photosensitive diffusion region by a channel in said substrate, said diffusion regions both being of the same conductivity type and of opposite conductivity type to that of said substrate; a metal-insulator-semiconductor gate spanning said substrate between said regions and over said channel; means electrically connecting said gate and said electrically floating photosensitive diffusion region; means for reverse biasing said second diffusion region with respect to said substrate; said element except for said photosensitive diffusion region being shielded against penetraton by visible light; the length of said channel between said regions, the resistivity of said substrate, the magnitude of said reverse bias and the depth of said diffusion regions being selected such that the potential barrier between said electrically floating photosensitive diffusion region and said channel is low enough that electrons photogenerated in response to visible light impinging on said electrically floating photosensitive diffusion region can be injected from said electrically floating photosensitive diffusion region into said channel to be collected by said second diffusion region, the voltage of said electrically floating photosensitive diffusion region thereby varying logarithmically with changes in visible light incident thereon. ### Claim 2 (depends on 1) An element according to claim 1 wherein said substrate is of p-type conductivity and said diffusion regions are of n-type conductivity. ### Claim 3 (depends on 2) An element according to claim 2 wherein said diffusion regions have a doping density in the region of from 10.sup.15 cm.sup.-3 to 10.sup.21 cm.sup.-3. ### Claim 4 (depends on 1) An element according to claim 1 wherein said metal-insulator-semiconductor gate is a polysilicon-SiO.sub.2 -semiconductor gate. ### Claim 5 (depends on 1) An element according to claim 1 wherein said channel is ion implanted. ### Claim 6 (depends on 1) An element according to claim 1 including a MOSFET device having a source, a drain and a gate, and means electrically connecting said gate of said MOSFET and said electrically floating photosensitive diffusion region.