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US 4,471,042 AGranted
Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
AssigneeCanon Kabushiki Kaisha
InventorsToshiyuki Komatsu, Yutaka Hirai, Katsumi Nakagawa, Tadaji Fukuda
Life of this patent
Estimating the term…
Abstract
An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
Claims84
An image forming member for electrophotography which comprises:
- (a) a substrate and;
- (b) a photoconductive layer, said photoconductive layer comprising an hydrogenated amorphous semiconductor and a high dark resistance and a high SN ratio for electrophotographic processing, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in an hydrogenated amorphous form in said photoconductive layer and;
- wherein said photoconductive layer contains 1-40 atomic percent of hydrogen and;
- (ii) oxygen as a chemical modifier.
2 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate and;
- (b) a photoconductive layer, said photoconductive layer comprising an hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in an hydrogenated amorphous form in said photoconductive layer and;
- wherein said photoconductive layer contains 1-40 atomic percent of hydrogen and;
- (ii) oxygen and at least one member selected from the group consisting of carbon and nitrogen, as a chemical modifier.
2 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising an amorphous semiconductor which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in an amorphous form in said photoconductive layer and containing hydrogen and oxygen in effective amounts to provide enhanced high dark resistance and a high SN ratio.
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising an amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in an amorphous form in said photoconductive layer and containing (i) hydrogen, (ii) oxygen and (iii) at least one member selected from the group consisting of carbon and nitrogen wherein said (i), (ii) and (iii) are present in effective amounts to provide enhanced high dark resistance and a high SN ratio.
An image forming member for electrophotography which comprises:
- (a) a substrate and;
- (b) a photoconductive layer, said photoconductive layer comprising an hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer;
- and
- (ii) from 0.1-30 atomic percent of a nitrogen chemical modifier, and;
- (c) a depletion layer in said photoconductive layer.
3 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) an effective amount of a chemical modifier to provide enhanced high dark resistance and a high SN ratio for electrophotographic processing, said chemical modifier being carbon and oxygen, and;
- (c) a depletion layer in said photoconductive layer.
2 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) nitrogen and at least one member selected from the group consisting of carbon and oxygen, as a chemical modifier, and;
- (c) a depletion layer in said photoconductive layer.
2 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) carbon and at least one member selected from the group consisting of oxygen and nitrogen, and;
- (c) a barrier layer disposed between the substrate and the photoconductive layer.
2 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) from 0.1-30 atomic percent of nitrogen as a chemical modifier, and;
- (c) a barrier layer disposed between the substrate and the photoconductive layer.
2 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) nitrogen and at least one member selected from the group consisting of carbon and oxygen, as a chemical modifier, and;
- (c) a barrier layer in contact with the photoconductive layer.
2 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in an amorphous form in said photoconductive layer;
- (ii) hydrogen and;
- (iii) oxygen in effective amounts to provide enhanced high dark resistance and a high SN ratio, and;
- (c) a barrier layer disposed between the substrate and the photoconductive layer.
3 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) from 0.1-30 atomic percent of a nitrogen chemical modifier, and;
- (c) a depletion layer in said photoconductive layer, and;
- (d) a covering layer overlying the photoconductive layer.
3 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) nitrogen and at least one member selected from the group consisting of carbon and oxygen, as a chemical modifier, and;
- (c) a depletion layer in said photoconductive layer, and;
- (d) a covering layer overlying the photoconductive layer.
3 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in an amorphous form in said photoconductive layer;
- (ii) oxygen, as a chemical modifier, and;
- (c) a depletion layer in said photoconductive layer, and;
- (d) a covering layer overlying the photoconductive layer.
3 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor;
- which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) from 0.1-30 atomic percent of a nitrogen chemical modifier, and;
- (c) a covering layer overlying the photoconductive layer.
3 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) nitrogen and at least one member selected from the group consisting of carbon and oxygen, as a chemical modifier, and;
- (c) a covering layer overlying the photoconductive layer.
2 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) an oxygen chemical modifier, and;
- (c) an electrically insulating covering layer overlying the photoconductive layer.
2 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- wherein said photoconductive layer contains 1-40 atomic percent of hydrogen and;
- (ii) from 0.1-30 atomic percent of a nitrogen chemical modifier, and;
- (c) a covering layer overlying the photoconductive layer, said covering layer being comprised of a synthetic resin.
3 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising an hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- wherein said photoconductive layer contains 1-40 atomic percent of hydrogen and;
- (ii) nitrogen and at least one member selected from the group consisting of carbon and oxygen, as a chemical modifier, and;
- (c) a covering layer overlying the photoconductive layer, said covering layer being comprised of a synthetic resin.
3 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate and;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer;
- and
- (ii) from 0.1-30 atomic percent of a nitrogen chemical modifier.
2 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- wherein said photoconductive layer contains 1-40 atomic percent of hydrogen and;
- (ii) carbon and at least one member selected from the group consisting of oxygen and nitrogen, as a chemical modifier, and;
- (c) a covering layer overlying the photoconductive layer.
3 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer;
- and
- (ii) from 0.1-30 atomic percent of a nitrogen chemical modifier, and;
- (c) a depletion layer in said photoconductive layer;
- (d) a barrier layer disposed between the substrate and the photoconductive layer;
- and
- (e) a covering layer overlying the photoconductive layer.
6 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer;
- and
- (ii) nitrogen and at least one member selected from the group consisting of carbon and oxygen, as a chemical modifier, and,
- (c) a depletion layer in said photoconductive layer;
- (d) a barrier layer disposed between the substrate and the photoconductive layer;
- and
- (e) a covering layer overlying the photoconductive layer.
6 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) carbon and
- (iii) nitrogen.
2 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) carbon and at least one member selected from the group consisting of oxygen and nitrogen, as a chemical modifier, and
- (c) a covering layer overlying the photoconductive layer.
2 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer;
- and
- (ii) from 0.1-30 atomic percent of a nitrogen chemical modifier, and;
- (c) a barrier layer disposed between the substrate and the photoconductive layer;
- and
- (d) a covering layer overlying the photoconductive layer.
5 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) nitrogen and at least one member selected from the group consisting of carbon and oxygen, as a chemical modifier, and;
- (c) a barrier layer disposed between the substrate and the photoconductive layer;
- and
- (d) a covering layer overlying the photoconductive layer.
4 more elements
A photoconductive member which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) from 0.1-30 atomic percent of nitrogen.
1 more element
A photoconductive member which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) oxygen present in effective amounts to provide enhanced high dark resistance and a high SN ratio.
1 more element
A photoconductive member which comprises:
- (a) a substrate
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) germanium as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- (ii) nitrogen in an amount from 0.1-30 atomic percent.
1 more element
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- wherein said photoconductive layer contains 1-40 atomic percent of hydrogen and;
- (ii) a chemical modifier present in an amount from 0.1 to 30 atomic percent and selected from the group consisting of oxygen and nitrogen, and;
- (c) an electrically insulating covering layer overlying the photoconductive layer.
3 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- wherein said photoconductive layer contains 1-40 atomic percent of hydrogen and;
- (ii) a chemical modifier of oxygen and at least one member selected from the group consisting of carbon and nitrogen, and;
- (c) a covering layer overlying the photoconductive layer.
3 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- wherein said photoconductive layer contains 1-40 atomic percent of hydrogen and;
- (ii) a chemical modifier of nitrogen and at least one member selected from the group consisting of oxygen and carbon, and;
- (c) a covering layer overlying the photoconductive layer.
3 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- wherein said photoconductive layer contains 1-40 atomic percent of hydrogen and;
- (ii) oxygen in an amount from 0.1 to 30 atomic percent as a chemical modifier;
- and
- (c) an electrically insulating covering layer overlying the photoconductive layer.
4 more elements
An image forming member for electrophotography which comprises:
- (a) a substrate;
- (b) a photoconductive layer, said photoconductive layer comprising a hydrogenated amorphous semiconductor, which semiconductor comprises:
- (i) a member of the group selected from silicon, germanium or mixtures thereof as a matrix, said matrix being in a hydrogenated amorphous form in said photoconductive layer and;
- wherein said photoconductive layer contains 1-40 atomic percent of hydrogen and;
- (ii) nitrogen in an amount from 0.1 to 30 atomic percent as a chemical modifier;
- and
- (c) a covering layer overlying the photoconductive layer.
4 more elements
Dependencies are inferred from the claim text.