Silicon ribbon growth wheel and method for heat flow control therein
AssigneeAtlantic Richfield Company
InventorsDavid L. Bender, Samuel N. Rea
Life of this patent
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Abstract
A silicon ribbon growth wheel having a thermal resistance zone between an outer silicon contacting surface and an inner cooling fluid contacting surface to control rate of heat flow from the outer to inner surfaces. In a preferred form the thermal resistance zone is defined by a row of holes through the wheel near the outer surface with said holes isolated from the cooling fluid. A method for controlling the heat flow is also diclosed.
Claims6
In apparatus for the production of semiconductor ribbon in which molten semiconductor material is brought into contact with the surface of a rotating metallic wheel, which wheel is cooled by a cooling fluid in an interior cavity of said wheel, the improvement comprising:
- said wheel having a thermal resistance zone positioned between its outer semiconductor contacting surface and its inner cooling fluid contacting surface.
A method for controlling best flow from the surface of a metallic wheel used in forming semiconductor ribbon by contacting a molten mass of said semiconductor material with the surface of said wheel as it is rotated and cooled by a cooling fluid in an internal cavity, comprising:
- providing a thermal resistance zone between the semiconductor contacting surface of said wheel and the inner cooling fluid contacting surface of said wheel.
Dependencies are inferred from the claim text.