Method for preparing composite or elementary semi-conducting polycrystalline films
AssigneeL'Etat Belge, Represente par le Secretaire General des Services de la Programmation de la Politique Scientifique
InventorLucien D. Laude
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Abstract
There is described a method for preparing polycrystalline semi-conducting films comprised of two elements respectively from Groups III and V, or Groups II and VI of the Periodic Table, by irradiating with a laser beam a film which is comprised of at least two layers from elements selected with a stoichiometric ratio, said film being deposited over a non-crystalline substrate and being coated with a protective layer, which method is comprised of irradiating said film with a structured laser beam to cause crystallizing into crystallites which are regularly aligned and with a size at least equal to the thickness of the resulting film.
Claims29
Method for preparing polycrystalline semi-conducting films comprised of two elements from Groups III and V, respectively, or Groups II and VI, respectively, of the Periodic Table, by irradiating with a laser beam a film, said film being comprised of at least two layers each of which is formed from one of said elements selected in a stoichiometric ratio, said film being deposited over a non-crystalline substrate and being coated with a protective layer, which method is comprised of irradiating said film with a structured laser beam to cause crystallizing of said elements into crystallites which are regularly aligned and which have a size at least equal to the thickness of the resulting film, wherein said laser beam is structured by passing the beam through an optical means which is so arranged as to cause interference fringes.
Method for preparing polycrystalline elementary semi-conducting films by irradiating with a laser beam an elementary amorphous semi-conducting film, said film being deposited over a non-crystalline substrate and being coated with a protective layer, which method comprises irradiating said film with a structured laser beam to cause crystallizing said semi-conducting film into crystallites which are regularly aligned and which have a size at least equal to the thickness of the resulting film, wherein said laser beam is structured by passing the beam through an optical means which is so arranged as to cause interference fringes.
Dependencies are inferred from the claim text.