Solid-state photoelectric converter

A photoelectric converter in solid-state assembly, comprising the following sections formed on the same non-semiconductive substrate:

• an elongated photoelectric converting section constituted of a number of photoelectric converting elements arranged in an array, each element having a light-receiving surface for input of light-information;
• and
• a signal processing circuit section comprising a corresponding number of accumulating means, each provided for a corresponding one of said photoelectric converting elements, for accumulation of signals produced as output from the corresponding photoelectric converting elements, a corresponding number of diodes for prevention of crosstalk between the photoelectric converting elements, and a corresponding number of transfer means for transferring the signals accumulated in the corresponding accumulating means;
• wherein said photoelectric converting elements, said diodes and said transfer means are constituted of thin semi-conductor films.

A photoelectric converter in solidstate assembly, comprising the following sections formed on the same non-semiconductive substrate:

• an elongated photoelectric converting section constituted of a number of photoelectric converting elements arranged in an array, each element having a light-receiving surface for input of light-information;
• and
• a signal processing circuit section comprising a corresponding number of diodes, each provided for one of said photoelectric converting elements directly connected thereto, for prevention of crosstalk between the photoelectric converting elements and a corresponding number of transistors, each being provided for one of said diodes directly connected thereto, for transferring the output signals from the corresponding photoelectric converting elements;
• wherein said photoelectric converting elements, said diodes and said transistors are constituted of thin semi-conductor films.

A photoelectric converter in solid-state assembly, comprising the following sections formed on the same non-semiconductive substrate:

• an elongated photoelectic converting section constituted of a number of photoelectric converting elements arranged in an array, each element having a light-receiving surface for input of light-information;
• and
• a signal processing circuit section comprising a corresponding number of accumulating means, each provided for a corresponding one of said photoelectric converting element, for accumulation of signals produced as output from the corresponding photoelectric converting elements, a corresponding number of transfer means for transferring the signals accumulated in the corresponding accumulating means, and a corresponding number of shift registers, each to drive a corresponding one of said transfer means in time series;
• wherein said photoelectric converting elements, and the transfer means and the shift registers constituting said signal processing circuit section are constituted of thin semi-conductor films.