Processing method using a focused ion beam
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorTadahiro Takigawa
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Abstract
A processing method using a focused ion beam is proposed which uses a focused ion beam radiation apparatus. When a specimen is irradiated with the focused ion beam in order to be etched, the desired etching depth of the specimen is preset as a function of a location. The ion dose of the focused ion beam, the acceleration voltage, or the etching time may be varied in accordance with the preset data.
Claims4
A processing method using a focused ion beam, which uses a focused ion beam radiation apparatus comprising an ion gun and an ion optical system for producing a micro ion beam, a deflecting device for scanning the ion beam on a surface of a wafer, a blanking device for blanking the ion beam, and a control device for controlling said devices, thereby etching the wafer by irradiation thereof with the focused ion beam, comprising the steps of:
- determining a desired etching depth of the wafer as a function of a location and presetting data of the etching depth in said control device;
- and
- controlling said blanking device in accordance with said data so as to vary a radiation time of the ion beam.
Dependencies are inferred from the claim text.