Process for the production of silicone carbide composite
AssigneeGeneral Electric Company
InventorJohn M. Ohno
Life of this patent
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Abstract
Sintered silicon carbide composites containing diamond crystals are made through a process wherein a first dispersion of diamond crystals and carbon black in paraffin is formed, along with a second dispersion of carbon fiber, carbon black and filler in paraffin. One of the dispersions is compacted to produce a physically stable intermediate compact which is then recompacted with the remaining dispersion to produce a binary compact. The latter is subjected to a vacuum for a period of time at a temperature sufficient to vaporize essentially all of the paraffin, after which the binary compact is infiltrated with liquid silicon and sintered to produce a .beta.-silicon carbide binder uniting the resulting composite.
Claims8
A process for preparing a bonded composite comprising:
- (a) blending diamond crystals and carbon black to permit an even coating of said diamond crystal surfaces;
- (b) forming a first dispersion of said blended diamond crystals and carbon black in paraffin;
- (c) forming a second dispersion of carbon fiber, carbon black and filler in paraffin;
- (d) compacting one of said dispersions to produce a physically stable intermediate compact;
- (e) recompacting said intermediate compact with the remaining dispersion to produce a binary compact;
- (f) subjecting said binary compact to a vacuum for a period of time at a temperature sufficient to vaporize essentially all of said paraffin;
- (g) infiltrating said binary compact with liquid silicon;
- and
- (h) sintering the binary compact containing infiltrated silicon under conditions sufficient to produce a .beta.-silicon carbide binder uniting said composite, elemental silicon forming approximately 3-6% by weight of said first dispersion after sintering.
Dependencies are inferred from the claim text.