Method and means for improved heat removal in compact semiconductor integrated circuits and similar devices utilizing coolant chambers and microscopic channels
AssigneeThe Board of Trustees of the Leland Stanford Junior University
InventorsDavid B. Tuckerman, Roger F. W. Pease
Life of this patent
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Abstract
A semiconductor chip having improved heat dissipation capability. The back surface of a semiconductor chip is provided with microscopic channels defined by fins in intimate contact with the chip. A cover is affixed to the fins to enclose the channels for the laminar flow of coolant fluid. The chip can be mounted in a recessed portion of a dual in-line package (DIP) with conductive tubes integral with the package providing the flow of coolant. Advantageously, the tubes can function as power busses to the integrated circuit.
Claims17
A heat generating device having improved heat removal capability comprising:
- a body portion having an external surface for cooling;
- a plurality of microscopic channels defined by fins in intimate contact with said external surface, the width of said channels being defined by ##EQU2## where .mu.=viscosity of coolant in poise (g cm.sup.-1 s.sup.-1)
- k.sub.l =thermal conductivity of coolant (W cm.sup.-1 K.sup.-1)
- .rho.C=volumetric heat capacity of coolant (J K.sup.-1 cm.sup.-3)
- P=driving pressure for forced convection (dynes cm.sup.-2)
- L=length of circuit substrate in direction of flow (cm)
- W.sub.c =width of channels (cm)
- Nu=Nusselt number;
- a coolant input chamber and a coolant output chamber, said chambers being connected by said channels;
- and a cover attached to said fins and to said chambers, to confine the flow of a coolant fluid through said channels.
A semiconductor integrated circuit having improved heat removal capability comprising:
- a semiconductor body having an integrated circuit defined in a first major surface;
- a plurality of microscopic channels defined by fins in intimate contact with a second major surface opposite from said first surface, the width of channels being defined by ##EQU3## where .mu.=viscosity of coolant in poise (g cm.sup.-1 s.sup.-)
- k.sub.l =thermal conductivity of liquid (W cm .sup.-1 K.sup.-1)
- .rho.C=volumetric heat capacity of liquid (J K.sup.-1 cm.sup.-3)
- P=driving pressure for forced convection (dynes cm.sup.-2)
- L=Length of circuit substrate in direction of flow (cm)
- W.sub.C =width of channels (cm)
- Nu=Nusselt number;
- a coolant input chamber and a coolant output chamber, said chambers being connected by said channels;
- a cover attached to said fins and to said chambers to confine the flow of coolant fluid through said channels;
- and
- means for uniformly distributing coolant fluid through said channels.
A semiconductor integrated circuit and package having improved heat removal capability comprising:
- a support member having a recessed portion in a major surface;
- a plurality of bonding pads within said recessed portion;
- and a plurality of conductive leads extending from said support member and in electrical contact with said bonding pads;
- a semiconductor integrated circuit chip having an integrated circuit defined in a first major surface and having a plurality of microscopic fins in integral contact with a second major surface opposite from said first major surface, said semiconductor integrated chip mounted in said recessed portion with said integrated circuit in electrical contact with said bonding pads;
- a first tube for applying a coolant fluid to one end of said recessed portion and a second tube for removing coolant from a second end of said recessed portion opposite from said first end;
- and
- a cover affixed to said fins and defining microscopic channels whereby coolant fluid flows from said first tube through said channels and then to said second tube, the width of said fins being defined by ##EQU4## where .mu.=viscosity of coolant in poise (g cm.sup.-1 s.sup.-1)
- k.sub.l =thermal conductivity of coolant (W cm.sup.-1 K.sup.-1)
- .rho.C=volumetric heat capacity of coolant (J K.sup.-1 cm.sup.-3)
- P=driving pressure for forced convection (dynes cm.sup.-2)
- L=length of circuit substrate in direction of flow (cm)
- W.sub.C =width of channels (cm)
- Nu=Nusselt number;
- and wherein said fins have a height to period ratio defined by
- [k.sub.fin /(2k.sub.l Nu)].sup.1/2
- where
- k.sub.fin =thermal conductivity of said fin material
- k.sub.l =thermal conductivity of said coolant
- Nu=Nusselt number.
Dependencies are inferred from the claim text.