US 4,448,804 A · Method for selective electroless plating of copper onto a non-conductive substrate surface

Abstract

Multistep process for electroless plating of copper onto a non-conductive surface including the steps of: (1) laminating a rough copper sheet onto the non-conductive surface; (2) etching away all the copper; (3) conditioning the surface with multifunctional positively charged molecules derived from copolymers of polyacrylamide and functionally active tetraalkylammonium compounds in an diluted inorganic acid; (4) activating the conditioned surface preferably with stannous/palladium chloride particles; (5) treating the activated surface with deionized water and diluted HCl; (6) applying a photoresist layer to the surface and selectively exposing and developing the photoresist to produce a mask corresponding to the negative of the desired circuit pattern; and (7) plating copper using successively two baths differing in their oxygen and CN.sup.- concentration, where the foregoing steps are interspersed with washing steps.

Claims20

Dependent claims

Method for selectively depositing copper onto the surface of a non-conductive substrate comprising the steps of:

(a) providing a copper sheet having a roughened surface;
(b) laminating said copper sheet to the non-conductive substrate surface by pressing the roughened surface of said copper sheet against the surface of said substrate;
(c) etching away all copper;
(d) conditioning the etched surface by contacting the surface with an acidic solution containing a multifunctional cationic group containing at least two available ionic moities;
(e) activating the conditioned surface with particles of palladium/stannous chloride;
(f) rinsing the activated surface with deionized water;
(g) bringing the rinsed, activated surface into contact with an aqueous solution of HCl;
(h) rinsing the HCl treated surface with deionized water;
(i) drying the substrate at a temperature between 60.degree. C. and 100.degree. C.;
(j) applying a photoresist layer to the cleaned, activated surface and exposing and developing the photoresist;
and
(k) plating the activated surface by bringing it into contact for a period from about 15 minutes to about 30 minutes with a first plating bath containing copper sulphate, a complexing agent, formaldehyde, a surfactant and an oxygen content of less than 2 ppm and then for a period from about 10 hours to about 20 hours with a second plating bath differing from the first plating bath by an increased oxygen content of about 3 ppm to about 4 ppm and a NaCN content of 10 ppm to 20 ppm.

9 more elements

Method for selectively depositing copper onto the surface of a dielectric substrate comprising the steps of:

(a) providing a copper sheet having a roughened surface;
(b) laminating said copper sheet to the dielectric substrate surface by pressing the roughened surface of said copper sheet against the surface of said substrate;
(c) etching away all copper by bringing the resulting laminated article into contact with an aqueous solution free of complexing agents and containing persulphate or CuCl.sub.2 and HCl;
(d) conditioning the etched surface by bringing the surface into contact with an acidic solution containing multifunctional positively charged molecules consisting of copolymers of polyacrylamide forming the inert backbone and functionally active tetraalkylammonium compounds;
(e) activating the conditioned surface by bringing the surface into contact with a solution containing about 1.2 grams of PdCl.sub.2, about 80 grams of SnCl.sub.2.2 H.sub.2 O, about 85 ml of 37% HCl and about 0.1 gram of a surfactant;
(f) rinsing the activated surface with deionized water;
(g) bringing the rinsed, activated surface into contact with an aqueous 8% solution of HCl;
(h) rinsing the HCl treated surface with deionized water;
(i) vacuum-drying the substrate at about 100.degree. C. for 30 minutes;
(j) laminating a photoresist layer to the cleaned, activated surface and exposing selectively and developing the photoresist;
(k) plating the activated surface by bringing the surface into contact for about 30 minutes with a plating bath containing:
______________________________________ dissolved O.sub.2 1.0-1.5 ppm copper sulphate 8-10 grams/liter EDTA 35-55 grams/liter HCHO 2-3 ml/liter surfactant .15%;
and ______________________________________
(l) bringing the resulting copper plated substrate into contact for about 15 hours with a plating bath containing:
______________________________________ dissolved O.sub.2 3 ppm copper sulphate 8-10 grams/liter EDTA 35-55 grams/liter NaCN 15-20 ppm HCHO 2-3 ml/liter surfactant .15%. ______________________________________

12 more elements

Method for selectively depositing copper onto a surface of a non-conductive dielectric substrate which has been electrolessly copper plated and subsequently rejected due to failures comprising the steps of:

(a) stripping any masking materials and etching off all the copper from the dielectric substrate;
(b) conditioning the etched surface by bringing the surface into contact with an acidic solution containing a multifunctional cationic group containing at least two available cationic moities;
(c) activating the conditioned surface by bringing the surface into contact with stannous/palladium chloride particles;
(d) rinsing the activated surface with deionized water;
(e) bringing the rinsed, activated surface into contact with an aqueous solution of HCl;
(f) rinsing the HCl treated surface with deionized water;
(g) drying the substrate at a temperature between 60.degree. C. and 100.degree. C.;
(h) applying a photoresist layer to the cleaned activated surface, and exposing and developing the photoresist;
and
(i) plating the activated surface by bringing the surface into contact for a period of from about 15 minutes to about 30 minutes with a first plating bath containing copper sulphate, a complexing agent, HCHO, a surfactant and less than 2 ppm oxygen and then for a period of from about 10 hours to about 20 hours with a second plating bath differing from the first plating bath by an increased oxygen content of about 3 ppm to about 4 ppm and a NaCN content of 10 ppm to 20 ppm.

7 more elements

Method for selectively depositing copper onto the surface of a non-conductive dielectric substrate which has been electrolessly copper plated and subsequently rejected due to failures comprising the steps of:

(a) stripping any masking materials and etching off all the copper from the dielectric substrate;
(b) conditioning the etched surface by bringing the surface into contact with an acidic solution containing multifunctional positively charged molecules derived from copolymers of polyacrylamide forming the inert backbone and functionally active tetraalkylammonium compounds;
(c) activating the conditioned surface by bringing the surface into contact with a colloidal solution prepared from a mixture formed by mixing a solution of SnCl.sub.2.2 H.sub.2 O in 37% HCl and a solution of PdCl.sub.2 in diluted HCl, boiling for two hours and adding a surfactant and containing per liter of solution about 600 grs of SnCl.sub.2.2 H.sub.2 O, about 10 grs of PdCl.sub.2, about 650 ml of 37% HCl and 0.7 gr of a surfactant, by diluting fixed amounts of said mixture with deionized water, the colloidal solution containing per liter 1.2 grams to 2.25 grams of PdCl.sub.2, 80 grams to 150 grams of SnCl.sub.2.2 H.sub.2 O, 85 ml to 160 ml of HCl and 0.09 gr to 0.16 gr of the surfactant;
(d) rinsing the activated surface with deionized water;
(e) bringing the rinsed, activated surface into contact with an aqueous 8% solution of HCl;
(f) rinsing the HCl treated surface with deionized water;
(g) vacuum-drying the substrate at about 100.degree. C. for about 30 minutes;
(h) laminating a photoresist layer to the cleaned, activated surface, and selectively exposing and developing the photoresist;
(i) plating the activated surface by bringing the surface into contact for about 30 minutes with a plating bath containing:
______________________________________ dissolved O.sub.2 1.0-1.5 ppm copper sulphate 8-10 grams/liter EDTA 35-55 grams/liter HCHO 2-3 ml/liter surfactant .15%;
and ______________________________________
(j) bringing the resulting copper plated substrate into contact for about 15 hours with a plating bath containing:
______________________________________ dissolved O.sub.2 3.5 ppm copper sulfate 8-10 grams/liter EDTA 35-55 grams/liter NaCN 15-20 ppm HCHO 2-3 ml/liter surfactant .15%. ______________________________________

10 more elements

Dependencies are inferred from the claim text.

Method for selective electroless plating of copper onto a non-conductive substrate surface

Life of this patent

Method for selective electroless plating of copper onto a non-conductive substrate surface

Life of this patent

Abstract

Claims20