Laser assisted lift-off
AssigneeTexas Instruments Incorporated
InventorSamuel C. Baber
Life of this patent
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Abstract
A method for selective removal of metallization in integrated circuits. A uniform metal film is applied over a patterned resist layer. A short pulse of radiant energy is then applied to the whole surface of the metal film. The resist underneath the metal film is locally heated enough to cause outgassing, which breaks the mechanical bond between the metal film and the resist. The metal film over the patterned resist layer is then removed, leaving the deposited metal film in place over areas which were not covered by the resist film.
Claims17
A method for patterning thin films in integrated circuit processing, comprising the steps of:
- providing a substrate having an integrated circuit surface;
- providing a patterned layer of organic polymer on said surface;
- depositing a thin film of a preselected material both over portions of said patterned layer of organic polymer and also over poritons of said substrate which are not covered by said patterned layer of organic polymer;
- heating said thin film with a pulse or radiation, whereby portions of said polymer in contact with said film are heated to break adhesion between said film and said polymer;
- and
- removing separated portions of said film from said polymer layer.
Dependencies are inferred from the claim text.