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US 4,447,469 AGranted
Process for forming sulfide layers by photochemical vapor deposition
AssigneeHughes Aircraft Company
InventorJohn W. Peters
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AssigneeHughes Aircraft Company
InventorJohn W. Peters
Estimating the term…
The specification discloses a low-temperature process for depositing a layer of a sulfide of a chosen element, such as zinc sulfide, on the surface of a substrate while simultaneously avoiding damage to the substrate. The process comprises exposing the substrate to a selected vapor phase reactant containing the chosen metal, such as dimethyl zinc, in the presence of neutral, charge-free sulfur atoms formed in a manner which avoids the generation of charged particles and high energy radiation that would damage the substrate. The sulfur atoms react with the vapor phase reactant to form the sulfide thereof, such as zinc sulfide, which deposits as a layer on the surface of the substrate. In a preferred process embodiment, the neutral sulfur atoms are generated by photochemical dissociation. In addition, there is disclosed a process for forming a native sulfide layer on the surface of a chosen substrate by exposing the substrate to neutral, charge-free sulfur atoms.
A process for depositing a sulfide layer of a chosen element on the surface of a selected substrate which comprises:
A process for depositing a sulfide layer of a chosen element on the surface of a selected substrate comprising exposing said surface to a chosen vapor phase reactant containing said element and a chosen sulfur-containing precursor in the presence of radiation of a selected wavelength in a manner sufficient to bring about a chemical reaction to form said sulfide layer on said substrate.
A low-temperature, charge-free process for depositing a layer of sulfide of a chosen element on the surface of a selected substrate while simultaneously avoiding damage to said substrate comprising exposing said substrate to a selected vapor phase reactant containing said element in the presence of neutral, charge-free sulfur atoms formed in a manner which avoids the generation of charged particles or high energy radiation, to bring about the reaction of said sulfur atoms with said vapor phase reactant to form said sulfide which deposits as said layer on said substrate, while simultaneously avoiding said damage to said substrate due to said charged particles or said high energy radiation.
A process for forming a layer of a native sulfide of a chosen material on the surface of a substrate of said chosen material comprising exposing said surface of said substrate to neutral, charge-free sulfur atoms to bring about a reaction between said sulfur atoms and said surface of said substrate to form said native sulfide.
A process for forming a native sulfide on a substrate of a chosen semiconductor material which comprises:
A process for forming a layer of a native sulfide of a chosen material on the surface of a substrate of said chosen material comprising exposing said surface of said substrate to a chosen sulfur-containing precursor in the presence of radiation of a selected wavelength in a manner sufficient to bring about a chemical reaction to form said native sulfide layer on said substrate.
A process for forming a semiconductor device having optimized electrical interface properties, comprising the steps of:
Dependencies are inferred from the claim text.