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US 4,447,291 AGranted
Method for via formation in HgCdTe
AssigneeTexas Instruments Incorporated
InventorEric Schulte
Life of this patent
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Abstract
A via formation process for HgCdTe (i.e., for pseudo-binary alloys of HgTe and CdTe). Photoresist is patterned on the HgCdTe surface, and ion milling is used to cut holes in the HgCdTe as defined by the photoresist. With this photoresist still in place, the HgCdTe is wet etched to smooth the via walls and expand the via size to a precise dimension.
Claims6
A method for forming vias in HgCdTe, comprising the steps of:
- ion milling a hole through said HgCdTe, said hole being substantially smaller than the desired diameter of said via;
- and
- wet etching said HgCdTe, whereby said hole is enlarged to form a via having a desired size and smooth walls.
Dependencies are inferred from the claim text.