Process for preparing homogeneous layers of composition Hg.sub.1-x Cd.sub.x
AssigneeSociete Anonyme de Telecommunications
InventorAlain Durand
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Abstract
Process for obtaining a homogeneous layer of composition Hg.sub.1-x Cd.sub.x Te, comprising the steps of: subjecting a wafer formed by a layer of Hg.sub.1-x.sbsb.o Cd.sub.x.sbsb.o Te deposited by epitaxial growth on a CdTe substrate, x.sub.o being less than the desired value x, to a melting treatment, then rapidly cooling the wafer.
Claims4
In a process for preparing a wafer comprising an epitaxial layer of Hg.sub.1-x Cd.sub.x Te on a substrate of CdTe by isothermal evaporation-diffusion in vacuo characterized by said epitaxial layer having mediocre internal homogeneity and a gradual compositional transition with the CdTe substrate, the improvement comprising:
- depositing a layer of an intermediate composition Hg.sub.1-x.sbsb.o Cd.sub.x.sbsb.o Te, wherein X.sub.o <X, by epitaxial growth on the CdTe substrate;
- melting said layer by subjecting it to heating to a temperature above the liquids point of the layer;
- and
- cooling said melted layer rapidly.
Dependencies are inferred from the claim text.