Method of making high dielectric constant insulators and capacitors using same

A process for making a dielectric material which includes oxidizing a metal-silicon alloy having a thickness between 4 and 16 nanometers until all of the alloy is converted into oxides, said metal being 40% to 90% of said alloy by atomic volume and being selected from the group consisting of tantalum, hafnium, zirconium, titanium, lanthanum, yttrium, scandium, niobium and vanadium.

A capacitor comprising

• first and second conductive layers, and
• a dielectric layer interposed between said conductive layers, said dielectric layer including a mixture of an oxide of a transition metal and an oxide of silicon.

A capacitor comprising

• first and second conductive layers, and
• a dielectric layer interposed between said conductive layers, said dielectric layer including a homogeneous mixture of hafnium dioxide (HfO.sub.2) and an oxide of silicon.

A capacitor comprising

• first and second conductive layers, and
• a dielectric layer interposed between said conductive layers, said dielectric layer including a homogeneous mixture of yttrium dioxide (YO.sub.2) and an oxide of silicon.

A capacitor comprising

• first and second conductive layers, and
• a dielectric layer interposed between said conductive layers, said dielectric layer consisting of a mixture of an oxide of a transition metal and an oxide of silicon.