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US 4,418,468 AGranted
Process for fabricating a logic structure utilizing polycrystalline silicon Schottky diodes
AssigneeFairchild Camera and Instrument Corporation
InventorsMadhukar B. Vora, Hermaj K. Hingarh
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Abstract
An integrated circuit structure and process for fabricating it are described which allow fabrication of a very compact high-speed logic gate. The structure utilizes a bipolar transistor formed in an epitaxial silicon pocket surrounded by silicon dioxide. A pair of Schottky diodes and a resistor are formed outside the epitaxial pocket on the silicon dioxide and connected to the pocket by doped polycrystalline silicon.
Claims9
A process for fabricating an integrated circuit comprising:
- fabricating a pocket of semiconductor material surrounded by insulating material;
- depositing a layer of a metal silicide on a first region of the insulating material;
- depositing a first layer of semiconductor material on the layer of metal silicide;
- and
- forming selected portions of a second layer of semiconductor material over at least a second region of the insulating material, the first layer of semiconductor material, and selected portions of the pocket, at least those portions of the second layer extending from the first layer to the pocket and from the pocket to the second region having higher impurity doping than that portion of the second layer overlying the second region.
2 more elements
Dependencies are inferred from the claim text.