Heterojunction-diode transistor EBS amplifier
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorHerman H. Wieder
Life of this patent
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Abstract
An improved apparatus modulates greater currents at higher frequencies over extended bandwidths. In addition to conventional biasing and modulation a beam of electrons is directed onto a heterojunction-diode device disposed to receive the modulating electron beam. The heterojunction diode device is fabricated from two different semiconducting materials having identical crystalline lattice structures, different fundamental energy bandgaps and different impurity types of different concentrations. This combination of properties assures greater output currents, higher frequency modulation and increased bandwidths.
Claims3
An apparatus for modulating a current flow comprising:
- means for directing a modulating beam of electrons and
- an asymmetrical n-p heterojunction-diode having a semitransparent electrode and a second electrode, the semitransparent electrode disposed to receive the modulating electron beam, the diode fabricated from two different semiconducting materials forming a heterojunction therebetween, the materials having identical crystalline lattice structures, different fundamental energy bandgaps and different impurity types of different concentrations, the two different semiconducting materials are p+InP and n-type In.sub.0.53 Ga.sub.0.47 As, the In.sub.0.53 Ga.sub.0.47 As material being in contact with the semitransparent electrode and the InP in contact with the other electrode.
An apparatus for modulating a current flow comprising:
- means for directing a modulating beam of electrons and
- an asymmetrical heterojunction field effect transistor provided with source and drain contacts and a gate and having its p-n heterointerface between the gate and epitaxed layer, heterointerface made between two different semiconductors disposed to receive the modulating electron beams, the semiconductors being fabricated from two different semiconducting materials forming a heterojunction therebetween having identical crystalline lattice structures, different fundamental energy bandgaps and different impurity types of different concentrations, the two different semiconducting materials are n-type GaAs and p+Ga.sub.0.5 Al.sub.0.5 As, the gate made up of Ga.sub.0.5 Al.sub.0.5 As and a semitransparent electrode and the source and drain contacts and gate disposed on the GaAs.
An apparatus for modulating a current flow comprising:
- means for directing a modulating beam of electrons and
- an asymmetrical heterojunction field effect transistor provided with source and drain contacts and a gate and having its p-n heterointerface between the gate and epitaxed layer, the heterointerface made between two different semiconductors disposed to receive the modulating electron beams, the semiconductors being fabricated from two different semiconducting materials having identical crystalline lattice structures, different fundamental energy bandgaps and different impurity types of different concentrations, the two different semiconductor materials are n-type In.sub.0.53 Ga.sub.0.47 As and p+InP, the gate made up of the InP and a semitransparent electrode and the source and drain contacts and gate disposed on the In.sub.0.53 Ga.sub.0.47 As.
Dependencies are inferred from the claim text.