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US 4,410,832 AGranted
EBS Device with cold-cathode
AssigneeThe United States of America as represented by the Secretary of the Army
InventorsBernard Smith, Stanley Dubuske
Life of this patent
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Abstract
Apparatus and method are described for fabricating a long life cold cathode lectron beam semiconductor device (EBS). Fabrication is given of a vacuum tube structure capable of sustaining sufficiently high vacuum over extended time to prevent poisoning of the cold cathode and steps are give for growth of a plural tip cold cathode structure.
Claims4
An electronic tube device comprising:
- an EBIT electron beam injected target means;
- a cold cathode emitting means comprising tungsten uranium oxide material, for bombarding said target means with electrons;
- grid means comprising molybdenum material, for modulating said electrons including means for directing said electrons toward said target means further, including means for electrically biasing said modulating and directing means;
- sealed tube means comprising sapphire ceramic material for completely enclosing said target means, emitting means, and means for modulating and directing, in a vacuum of 10.sup.-7 to 10.sup.-8 Torr, further including a getter means specifically used for maintaining said vacuum;
- and
- means for conducting input electrical signals into, and output electrical signals from, the said electronic tube device, whereby amplification of said input electrical signals may be accomplished by use of the said electronic tube device.
3 more elements
Dependencies are inferred from the claim text.