Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby

A process of fabricating a semiconductor structure comprising:

• depositing a layer of polycrystalline semiconductor on a substrate;
• patterning said polycrystalline semiconductor layer to define a plurality of elongated islands of polycrystalline semiconductor material disposed in spaced parallel relation to each other on said substrate;
• successively scanning each of said plurality of elongated islands of polycrystalline semiconductor material with a laser beam maintained at an intensity sufficient to cause annealing and recrystallization of each elongated island of polycrystalline semiconductor material;
• converting the polycrystalline semiconductor material in each of said elongated islands to crystalline semiconductor material having an enhanced electron mobility characteristic in response to the scanning of the laser beam causing annealing and recrystallization thereof;
• removing any unannealed regions and laser-induced distorted regions from each of said elongated islands of crystalline semiconductor material;
• further patterning said elongated islands of crystalline semiconductor material to sub-divide each of said elongated islands into a plurality of smaller islands of crystalline semiconductor material disposed in spaced relation to each other on said substrate;
• and
• thereafter fabricating electronic devices in respective smaller islands of crystalline semiconductor material.

A process of fabricating a monolithic display structure combined with semiconductor integrated circuits on the same substrate comprising:

• forming a plurality of islands of polycrystalline semiconductor material disposed in spaced relation to each other on a substrate;
• subjecting said polycrystalline semiconductor islands to focused energy from a source thereof maintained at an intensity sufficient to cause recrystallization of the polycrystalline semiconductor material of said islands;
• converting the polycrystalline semiconductor material in said islands to crystalline semiconductor material having an enhanced electron mobility characteristic in response to the impingement of the focused energy thereon causing recrystallization thereof;
• removing any untreated regions and focused energyinduced distorted regions from each of said islands of crystalline semiconductor material;
• fabricating electronic devices in respective crystalline semiconductor islands;
• and
• forming an electronically operable display on the same side of said substrate as said electronic devices including respective display units electrically interconnected with a corresponding one of said electronic devices.

A process of fabricating a monolithic display structure combined with semiconductor integrated circuits on the same substrate comprising:

• depositing a layer of polycrystalline semiconductor material on a substrate;
• patterning said polycrystalline semiconductor layer to define a plurality of elongated islands of polycrystalline semiconductor material disposed in spaced parallel relation to each other on said substrate;
• successively scanning each of said plurality of elongated islands of polycrystalline semiconductor material with a laser beam maintained at an intensity sufficient to cause annealing and recrystallization of each elongated island of polycrystalline semiconductor material;
• converting the polycrystalline semiconductor material in each of said elongated islands to crystalline semiconductor material having an enhanced electron mobility characteristic in response to the scanning of the laser beam causing annealing and recrystallization thereof;
• removing any unannealed regions and laser-induced distorted regions from each of said elongated islands of crystalline semiconductor material;
• further patterning said elongated islands of crystalline semiconductor material to sub-divide each of said elongated islands into a plurality of smaller islands of crystalline semiconductor material disposed in spaced relation to each other on said substrate;
• fabricating electronic devices in respective smaller islands of crystalline semiconductor material;
• and
• forming an electronically operable display on the same side of said substrate as said electronic devices including respective display units electrically interconnected with a corresponding one of said electronic devices.