Loading patent…
AssigneeHughes Aircraft Company
InventorsRicardo C. Pastor, Remedios K. Chew, Luisa E. Gorre
Estimating the term…
The specification discloses a process for forming a coherent, uniform oxide layer on the surface of a selected semiconductor material by heating a wafer of the selected semiconductor material at a temperature of about 750.degree. C. or lower in the presence of a chosen oxygen-containing precursor and a chosen gas phase halogen-containing molecular reactant which reacts with the oxygen-containing precursor to form atomic oxygen. The substrate is heated in the presence of these reactants for a period of time sufficient to enable the atomic oxygen to react with the surface atoms of the wafer and thus form the coherent uniform oxide layer. The temperature of about 750.degree. C. is sufficiently low to avoid adverse effects, such as dopant migration, on the wafer. In a preferred embodiment of the present invention, a coherent, uniform layer of silicon dioxide is formed on the surface of a silicon wafer.
A process for forming a coherent, uniform oxide layer on the surface of a selected semiconductor material which comprises:
A process for forming an oxide layer on a chosen semiconductor substrate which comprises exposing a surface of said substrate at a temperature of about 750.degree. C. to a mixture of a selected oxygen-containing precursor and a gas phase halogen-containing molecular reactant which is capable of being dissociated by heat to produce atomic halogen that reacts with said oxygen-containing precursor to dissociate off atomic oxygen at said temperature which does not adversely affect said chosen semiconductor substrate, to thereby form said oxide layer on said surface of said substrate.
Dependencies are inferred from the claim text.