Photoelectric conversion semiconductor and manufacturing method thereof

A photoelectric conversion semiconductor which is formed of a mixture of a microcrystalline semiconductor and a non-crystalline semiconductor and in which the mixture is doped with a dangling bond neutralizer and the microcrystalline semiconductor has a lattice strain;

• the microcrystalline semiconductor is 5 to 200 A in particle size and dispersed in the non-crystalline semiconductor;
• the dangling bond neutralizer is hydrogen, chlorine or fluorine;
• the microcrystalline semiconductor and the non-crystalline semiconductor are each formed by silicon, germanium, Si.sub.3 N.sub.4-x (0<x<4), SiC.sub.x (0<x<1), Si.sub.x Ge.sub.1-x (0<x<1), GaAs, BP or InP.