Ion beam exposure of (g-Ge.sub.x -Se.sub.1-x) inorganic resists
AssigneeCornell Research Foundation, Inc.
InventorsKaranam Balasubramanyam, Arthur L. Ruoff
Life of this patent
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Abstract
This invention relates to thin (g-Ge.sub.x -Se.sub.1--x) positive ionresists and thin (g-Ge.sub.x -Se.sub.1--x) with absorbed or chemically bonded silver as a negative ionresist, which when exposed to H.sup.+ ion beams and subsequently developed, for example by alkaline solutions, have a useful differential dissolution rate, when comparing exposed and unexposed areas, with excellent resolution. The ionresist materials and processes of the invention are useful, for example, in forming solid-state electronic articles.
Claims8
A method of forming a predetermined pattern on a substrate which comprises
- (a) forming a thin (g-Ge.sub.x Se.sub.1-x) film on a solid substrate by vacuum vapor deposition wherein the angle of deposition is an angle between 5.degree. to about 85.degree. with respect to the normal,
- (b) masking a portion of said film with an ion beam penetration retarding masking material,
- (c) exposing the unmasked portion of the film to an ion beam at a voltage adapted to and with an ion dose sufficient to provide a substantial differential dissolution rate between the masked and unmasked portion of the film when developed with a solvent for said film, and
- (d) developing said film by removing the exposed portion of that film to uncover the corresponding portion of the substrate while the portion of said film which was masked during the exposure remains adhered to the substrate.
A method of forming a predetermined film pattern upon a substrate which comprises:
- (a) forming an adherent thin (g-Ge.sub.x Se.sub.1-x) film on a solid substrate by vacuum vapor deposition wherein the angle of deposition is an angle between 5.degree. to about 85.degree. with respect to the normal,
- (b) forming an adherent surface layer of Ag.sub.2 Se, or other silver compounds or alloys on the surface of the (g-Ge.sub.x Se.sub.1-x) film,
- (c) masking a portion of the resultant article with an ion beam penetration retarding masking material,
- (d) exposing the unmasked portion of the Ag.sub.2 Se layer to an ion beam at a voltage adapted to and with an ion dose sufficient to provide a substantial differential dissolution rate between the masked and unmasked portions of the (g-Ge.sub.x Se.sub.1-x) film, once the masked portion of the Ag.sub.2 Se surface layer is removed,
- (e) removing the Ag.sub.2 Se layer from the masked portion of the resultant ion beam exposed article,
- (f) developing said film by removing the unexposed portion of the film to uncover the corresponding portion of the substrate while the portion of said film which was unmasked during the exposure remains adhered to the substrate.
A method of forming a predetermined pattern on a substrate which comprises
- (a) forming a thin (g-Ge.sub.x Se.sub.1-x) film on a solid substrate by vacuum vapor deposition wherein the angle of deposition is an angle between 5.degree. to about 85.degree. with respect to the normal,
- (b) exposing a portion of the film to a focussed ion beam at a voltage adapted to and with an ion dose sufficient to provide a substantial differential dissolution rate between the exposed and unexposed portion of the film when developed with a solvent for said film, and
- (c) developing said film by removing the exposed portion of that film to uncover the corresponding portion of the substrate while the portion of said film which was masked during the exposure remains adhered to the substrate.
A method of forming a predetermined film pattern upon a substrate which comprises:
- (a) forming an adherent thin (g-Ge.sub.x Se.sub.1-x) film on a solid substrate by vacuum vapor deposition wherein the angle of deposition is an angle between 5.degree. to about 85.degree. with respect to the normal,
- (b) forming an adherent surface layer of Ag.sub.2 Se, or other silver compounds or alloys on the surface of the (g-Ge.sub.x Se.sub.1-x) film,
- (c) exposing a portion of the Ag.sub.2 Se layer to a focussed H.sup.+ ion beam at a voltage adapted to and with an ion dose sufficient to provide a substantial differential dissolution rate between the exposed and unexposed portions of the (g-Ge.sub.x Se.sub.1-x) film, once the unexposed portion of the g-Ge.sub.x Se.sub.1-x surface layer is removed,
- (d) removing the Ag.sub.2 Se layer from the unexposed portion of the resultant ion beam exposed article,
- (e) developing said film by removing the unexposed portion of the film to uncover the corresponding portion of the substrate while the portion of said film which was exposed during the ion exposure remains adhered to the substrate.
Dependencies are inferred from the claim text.