Epitaxial composite and method of making
AssigneeRockwell International Corporation
InventorHarold M. Manasevit
Life of this patent
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Abstract
An epitaxial composite comprising a thin film of single crystal Group III-V wide band-gap compound semiconductor or semiconductor alloy on single crystal, electrically insulating oxide substrates such as sapphire, spinel, BeO, ThO.sub.2, or the like, and on III-V semiconductors or alloys. The thin film may be produced in situ on a heated substrate by reaction of an organic compound containing the Group III constituent, typically tfhe alkyl metal organic, such as trimethylgallium and/or triethylgallium with a Group V hydride such as arsine, phosphine and/or stibine.
Claims75
A composite comprising a monocrystalline, electrically insulating, oxide substrate and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate in which the Group III constituent of the semiconductor comprises at least one element selected from the class consisting of gallium and indium.
A composite comprising a monocrystalline, electrically insulating, oxide substrate and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate, in which the Group V constituent of the semiconductor comprises at least one element selected from the class consisting of phosphorus, arsenic, and antimony.
A composite comprising a monocrystalline, electrically insulating, oxide subtrate and a single crystalline film consisting of a cubic Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate.
A composite comprising:
- an electrically insulating substrate having a cubic monocrystalline structure selected from the group consisting of thorium oxide and barium fluoride;
- and
- a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate.
A composite comprising:
- an electrically insulating substrate having a cubic monocrystalline structure selected from the group consisting of thorium oxide, calcium fluoride and barium fluoride;
- and
- a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate, and wherein the Group III constituent of the semiconductor contains more than one of the Group III elements.
A composite comprising:
- an electrically insulating substrate having a cubic monocrystalline structure selected from the group consisting of thorium oxide, calcium fluoride and barium fluoride;
- and
- a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate, and wherein the Group V constituent of the semiconductor contains more than one of the Group V elements.
A composite comprising:
- an electrically insulating gadolinium gallium garnet substrate having a cubic monocrystalline structure;
- and
- a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on said substrate.
The composite according to claim 35 in which the Group III-V semiconductor is impurity doped.
A composite consisting of:
- an electrically insulating monocrystalline substrate selected from the class of crystal structures consisting of rhombohedral, orthorhombic, and hexagonal;
- and
- a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate the constituents of the Group III-V semiconductor being selected from the class consisting of a least one of the Group III elements gallium, aluminum, and indium, and the class consisting of at least one of the Group V elements arsenic, phosphorus and antimony, respectively.
A composite consisting of a monocrystalline sapphire substrate, said substrate having an exposed surface with an orientation selected from the class of orientations consisting of (1125) , (1126), (0001), (1123), (0112) and their crystallographic equivalents, and a single crystalline film consisting of cubic Group III-V semiconductor expitaxially disposed on said substrate wherein the orientation of the crystalline lattice of said single crystalline film is the (111) plane.
A composite comprising a monocrystalline spinel (MgAl.sub.2 O.sub.4) substrate having the (110) surface exposed, and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate wherein the orientation of the crystalline lattice of said single crystal film is the (100) plane.
A composite comprising a monocrystalline gadolinium gallium garnet substrate having the (211) surface exposed, and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on said substrate wherein the orientation of the crystalline lattice of said single crystal film is the (111) plane.
A composite consisting of a monocrystalline beryllium oxide substrate, said substrate having an exposed surface with an orientation selected from the group of orientations consisting of (1011) and (0001) and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on said substrate wherein the orientation of the crystalline lattice of said crystal film is the (111) plane.
A composite consisting of a monocrystalline beryllium oxide substrate, said substrate having its (1010) surface exposed and a single crystal film consiting of a Group III-V semiconductor epitaxially disposed on said substrate wherein the orientation of the crystalline lattice of said crystal film is the (100) plane.
A composite consisting of:
- an electrically insulating monocrystalline oxide substrate;
- and
- a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said oxide substrate, the constituents of the Group III-V semiconductor being selected from the class consisting of at least one of the Group III elements gallium, aluminum, and indium, and the class consisting of at least one of the Group V elements arsenic, phosphorus and antimony, respectively.
A composite comprising:
- an electrically insulating monocrystalline oxide substrate;
- and
- a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said oxide substrate, and wherein the substrate is selected from the group consisting of sapphhire, chrysoberyl and beryllium oxide, and in which the Group III constituent of the semiconductor contains more than one of the Group III elements.
A composite comprising:
- an electrically insulating monocrystalline oxide substrate;
- and
- a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said oxide substrate, and wherein the substrate is selected from the group consisting of sapphire, chrysoberyl and beryllium oxide, and in which the Group V constituent of the semiconductor contains more than one of the Group V elements.
A composite comprising a monocrystalline thorium oxide (ThO.sub.2) substrate, and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate.
A composite comprising a monocrystalline chrysoberyl (Al.sub.2 BeO.sub.4) substrate, and a single crystal film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate.
A composite comprising a monocrystalline, electrically insulating substrate and a single crystalline film consisting of a Group III-V semiconductor epitaxially disposed on and in direct contact with said substrate, and wherein said semiconductor film is deposited on said substrate by a metal-organic process, the constituents of the Group III-V semiconductor being selected from the class consisting of at least one of the Group III elements gallium, aluminum, and indium, and the class consisting of at least one of the Group V elements arsenic, phosphorus and antimony, respectively.
A composite comprising a monocrystalline, electrically insulating substrate and a single crystal film consisting of a Group III-V semiconductor solid solution epitaxially disposed on and in direct contact with said substrate, said Group III constituents containing more than one of the Group III elements.
A composite comprising a monocrystalline, electrically insulating substrate and a single crystal film consisting of a Group III-V semiconductor solid solution epitaxially disposed on and in direct contact with said substrate, said Group V constituent containing more than one of the Group V elements.
Dependencies are inferred from the claim text.