# US 4,400,710 A · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 4,400,710 A - Document ID: US4400710A - Status: Granted - Kind: A - Application number: 06/210,531 - Filed: 1980-11-25 - Granted: 1983-08-23 - Earliest claimed: 1979-11-26 - Assignees: Zaidan Hojin Handotai Kenkyu Shinkokai - Inventors: Jun-ichi Nishizawa; Tadahiro Ohmi; Keishiro Takahashi - Web page: https://patentgrep.com/patent/US4400710A ## CPC - H10D 64/647: {Schottky drain or source electrodes for IGFETs} - H10D 12/00: Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT] - H10D 12/212: {having PN junction gates, e.g. field controlled diodes} - H10D 30/80: FETs having rectifying junction gate electrodes (H10D30/40 takes precedence) - H10D 64/649: {Schottky drain or source electrodes for FETs having rectifying junction gate electrodes} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device having its carrier-injecting region formed with a Schottky structure, and arranged so that the current flowing through the Schottky barrier by virtue of tunnel effect is controlled by a controlling electrode to thereby control the drain or collector or anode current. Thus, this device has a large current density and a large current gain. This device can be used not only as a discrete one, but also it is quite suitable when applied to integrated circuits. ## Claims ### Claim 1 A semiconductor device, comprising: a first lightly-doped semiconductor region of a first conductivity type and having a principal surface; a second highly-doped semiconductor region of a second conductivity type opposite to said first conductivity type formed at said principal surface of said first semiconductor region to form a pn junction therewith and surrounding a portion of said first semiconductor region to define a current channel region therein: a Schottky metal electrode connected to that part of said principal surface corresponding to said current channel region of said semiconductor region; and a carrier-collecting highly-doped semiconductor region disposed adjacent to said first semiconductor region on that side of said first semiconductor region located opposite to said principal surface for extracting majority carriers injected from said Schottky metal electrode, through said channel region said second semiconductor region being responsive to forward bias signals applied thereto, said majority carriers injected from said Schottky metal electrode increasing with an increase of said forward bias voltage. ### Claim 2 (depends on 1) A semiconductor device according to claim 1, wherein said channel region has such impurity concentration and width as to insure that a portion of said channel region located in a foreground of said Schottky metal electrode is substantially covered by depletion layers growing into said channel region from said Schottky metal electrode. ### Claim 3 (depends on 2) A semiconductor device according to claim 2, wherein said channel impurity concentration (N) and said channel width (2a) are selected to satisfy: N.times.(2a).sup.2 .ltorsim.1.times.10.sup.8 cm.sup.-1. ### Claim 4 (depends on 2) A semiconductor device according to claim 2, wherein said channel region has a broad width (2a) and a low impurity concentration, and said second semiconductor region has a shallow depth into said first semiconductor region, and the potential distribution in said channel region is sensitive to the voltage of said carrier-collecting semiconductor region. ### Claim 5 (depends on 2) A semiconductor device according to claim 2, wherein said channel region has a small width and said second semiconductor region has a great depth into said first semiconductor region and the potential distribution in said channel region is substantially insensitive to the voltage of said carrier-collecting semiconductor region. ### Claim 6 (depends on 1, 2, 3, 4, 5) A semiconductor device according to claim 1, 2, 3, 4 or 5, wherein said second semiconductor region has an impurity concentration of at least 1.times.10.sup.18 cm.sup.-3. ### Claim 7 (depends on 1, 2, 3, 4, 5) A semiconductor device according to claim 1, 2, 3, 4 or 5 wherein said metal electrode is a metal selected from a group of metals consisting of Pt, Ti, Ta, W and Mo. ### Claim 8 (depends on 1, 2, 3, 4, 5) A semiconductor device according to claim 1, 2, 3, 4 or 5, wherein said Schottky metal electrode comprises a layer formed of a silicide of a metal selected from the group consisting of Pt, Ti, Ta, W, and Mo. ### Claim 9 (depends on 1, 2, 3, 4, 5) A semiconductor device according to claim 1, 2, 3, 4 or 5 further comprising: an insulating layer formed between said second semiconductor region, and said carrier-collecting semiconductor region. ### Claim 10 (depends on 1, 2, 3, 4, 5) A semiconductor device according to claim 1, 2, 3, 4 or 5 wherein said first, second and carrier-collecting semiconductor regions are disposed at least partially coplanar to each other on said principal surface. ### Claim 11 (depends on 1) A semiconductor device according to claim 1, wherein said carrier-collecting semiconductor region is a third highly-doped semiconductor region having the same conductivity type as that of said second semiconductor region and an impurity concentration higher than that of said first semiconductor region. ### Claim 12 (depends on 1) A semiconductor device according to claim 1, wherein said carrier-collecting region includes alternately disposed first and second portions, said first portions having the same conductivity type as that of said second semiconductor region and an impurity concentration higher than that of said first semiconductor region, and said second portions having the same conductivity type as that of said first semiconductor region and an impurity concentration higher than that of said first semiconductor region, and a third portion disposed between said first and second portions and said first semiconductor region, said third portion comprising a thin fifth semiconductor region having the same conductivity type as that of said first semiconductor region and an impurity concentration higher than that of said first semiconductor region but lower than that of said carrier collecting region second portions. ### Claim 13 (depends on 1, 2, 3, 4, 5) A semiconductor device according to claim 1, 2, 3, 4 or 5, wherein said carrier-collecting region is a highly-doped semiconductor region having said first conductivity type. ### Claim 14 (depends on 6) A semiconductor device according to claim 6 wherein said carrier-collecting region is a highly-doped semiconductor region having said first conductivity type. ### Claim 15 (depends on 7) A semiconductor device according to claim 7 wherein said carrier-collecting region is a highly-doped semiconductor region having said first conductivity type. ### Claim 16 (depends on 8) A semiconductor device according to claim 8, wherein said carrier-collecting region is a highly-doped semiconductor region having said first conductivity type. ### Claim 17 (depends on 9) A semiconductor device according to claim 9, wherein said carrier-collecting region is a highly-doped semiconductor region having said first conductivity type. ### Claim 18 (depends on 10) A semiconductor device according to claim 10, wherein said carrier-collecting region is a highly-doped semiconductor region having said first conductivity type. ### Claim 19 (depends on 6) A semiconductor device according to claim 6, wherein said metal electrode is a metal selected from a group of metals consisting of Pt, Ti, Ta, W and Mo. ### Claim 20 (depends on 6) A semiconductor device according to claim 6, wherein said Schottky metal electrode comprises a layer formed for a silicide of a metal selected from the group consisting of Pt, Ti, Ta, W, and Mo. ### Claim 21 (depends on 6) A semiconductor device according to claim 6, further comprising: an insulating layer formed between said second semiconductor region, and said carrier-collecting semicondutor region. ### Claim 22 (depends on 7) A semiconductor device according to claim 7, further comprising: an insulating layer formed between said second semiconductor region, and said carrier-collecting semiconductor region. ### Claim 23 (depends on 8) A semiconductor device according to claim 8, further comprising: an insulating layer formed between said second semiconductor region, and said carrier-collecting semiconductor region. ### Claim 24 (depends on 6) A semiconductor device according to claim 6, wherein said first, second and carrier-collecting semiconductor regions are disposed at least partially coplanar to each other on said principal surface. ### Claim 25 (depends on 7) A semiconductor device according to claim 7, wherein said first, second and carrier-collecting semiconductor regions are disposed at least partially coplanar to each other on said principal surface. ### Claim 26 (depends on 8) A semiconductor device according to claim 8, wherein said first, second and carrier-collecting semiconductor regions are disposed at least partially coplanar to each other on said principal surface. ### Claim 27 (depends on 9) A semiconductor device according to claim 9, wherein said first, second and carrier-collecting semiconductor regions are disposed at least partially coplanar to each other on said principal surface.