# US 4,400,407 A · Method for deposition of thin film alloys utilizing electron beam vaporization

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- Number: US 4,400,407 A
- Document ID: US4400407A
- Status: Granted
- Kind: A
- Application number: 06/283,580
- Filed: 1981-07-15
- Granted: 1983-08-23
- Earliest claimed: 1980-12-29
- Assignees: Rockwell International Corporation
- Inventors: Addison B. Jones
- Web page: https://patentgrep.com/patent/US4400407A

## CPC

- C23C 14/30: by electron bombardment
- C23C 14/246: {Replenishment of source material}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

The invention is an apparatus and method for achieving thin film deposition, of uniform composition, from evaporated alloys. A source of wire alloy, selected for the particular thin film deposition on a substrate, is continuously fed through a region of high speed electron bombardment confined to an end of the wire, for evaporation of the wire in the vicinity of the substrate. An ion flux detector controls the rate of feeding of the wire source in accordance with the detected flux to lay down a uniform thin film of predetermined thickness. A high potential is established between the wire and the source of the electrons and the liberated electrons are guided by the electric field toward the end of the wire being evaporated, which serves as an anode.

## Claims

### Claim 1

The method of evaporation of alloys for thin film deposition on substrates comprising the steps of:
bombarding an end of a wire of alloy, selected for deposition in the vicinity of the substrate by high speed voltage attracted electrons; and,
feeding the wire to replace the end being vaporized.

### Claim 2

The method of evaporation of alloys for thin film deposition on substrates comprising the steps of:
bombarding an end of a wire of alloy, selected for deposition, in the vicinity of the substrate by high speed voltage attracted electrons;
feeding the wire to replace the end being vaporized; and controlling the feeding of the wire in accordance with deposition rate detected in said vicinity.

### Claim 3 (depends on 2)

The method of claim 2, wherein:
said deposition rate is detected by means of ion flux measurement.

### Claim 4

The method of evaporation of alloys for thin film deposition on substrates comprising the steps of:
bombarding an end of a wire of alloy, selected for deposition, in the vicinity of the substrate by high speed voltage attracted electrons;
feeding the wire to replace the end being vaporized; and controlling the energy of the high speed electrons in accordance with deposition rate desired.

### Claim 5

The method of evaporation of alloys for thin film deposition on substrates comprising the steps of:
bombarding an end of a wire of alloy, selecting for deposition, in the vicinity of the substrate by high speed voltage attracted electrons;
feeding the wire to replace the end being vaporized; and controlling the bombarding energy of the high speed electrons being in accordance with a characteristic of said end to determine the rate of deposition.