# US 4,400,351 A · High thermal resistance, high electric conductivity copper base alloy

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- Number: US 4,400,351 A
- Document ID: US4400351A
- Status: Granted
- Kind: A
- Application number: 06/269,687
- Filed: 1981-06-02
- Granted: 1983-08-23
- Earliest claimed: 1980-06-13
- Assignees: Mitsubishi Kinzoku Kabushiki Kaisha
- Inventors: Shinichi Komori; Yasushi Shimanuki; Isamu Suzuki
- Web page: https://patentgrep.com/patent/US4400351A

## CPC

- C22C 9/00: Alloys based on copper
- H01B 1/026: {Alloys based on copper}
- C22C: ALLOYS (treatment of alloys C21D, C22F)
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})

## Abstract

An improved copper base alloy having excellent thermal resistance and electric conductivity. The alloy consists essentially of from 0.0005 to 0.01 percent boron, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, indium from 0.002 to 0.03 percent, tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities. The copper base alloy may further contain from 0.002 to 0.05 percent magnesium whereby the magnesium imparts further enhanced thermal resistance to the alloy.

## Claims

### Claim 1

A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.002 to 0.05 percent magnesium, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, indium from 0.002 to 0.03 percent, tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities.

### Claim 2 (depends on 1)

The copper base alloy as recited in claim 1, wherein the boron is present in an amount from 0.0008 to 0.005 percent.

### Claim 3 (depends on 1)

The copper base alloy as recited in claim 1, wherein the magnesium is present in an amount from 0.01 to 0.03 percent.

### Claim 4 (depends on 1)

The copper base alloy as recited in claim 1, wherein the phosphorus is present in an amount from 0.005 to 0.008 percent.

### Claim 5 (depends on 1)

The copper base alloy as recited in claim 1, wherein the indium is present in an amount from 0.01 to 0.03 percent.

### Claim 6 (depends on 1)

The copper base alloy as recited in claim 1, wherein the tellurium is present in an amount from 0.002 to 0.05 percent.

### Claim 7

A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.002 to 0.03 percent indium, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent and tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities.

### Claim 8

A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.002 to 0.05 percent magnesium, from 0.002 to 0.03 percent indium, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent and tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities.

### Claim 9

A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.01 to 0.03 percent indium, and the balance copper and inevitable impurities.

### Claim 10 (depends on 9)

The copper base alloy of claim 9 which also contains a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, tellurium from 0.001 to 0.06 percent and mixtures thereof.

### Claim 11

A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.002 to 0.05 percent tellurium, and the balance copper and inevitable impurities.

### Claim 12 (depends on 11)

The copper base alloy of claim 11 which also contains a material selected from the group consisting of indium from 0.01 to 0.03 percent, phosphorus from 0.001 to 0.01 percent and mixtures thereof.

### Claim 13

A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.01 percent boron, from 0.001 to 0.06 percent tellurium, a material selected from the group consisting of indium from 0.01 to 0.03 percent, phosphorus from 0.001 to 0.01 percent and mixtures thereof, and the balance copper and inevitable impurities.

### Claim 14

A high thermal resistance, high electric conductivity copper base alloy consisting essentially of from 0.0005 to 0.0031 percent boron, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, indium from 0.002 to 0.03 percent, tellurium from 0.001 to 0.06 percent and mixtures thereof, and the balance copper and inevitable impurities.