Method for preparing transparent, electrically conducting indium oxide (In.sub.2 O.sub.3) films
AssigneeSiemens Aktiengesellschaft
InventorsHelmut Freller, Peter Schack
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Abstract
Indium-tin alloy targets are high-frequency cathode sputtered using water vapor with a pressure of between 10.sup.-3 mbar and 5.times.10.sup.-3 mbar as the reaction gas. The temperature-sensitive substrates used are water-cooled during the deposition. This is a continuation of application Ser. No. 168,244 filed July 10, 1980, now abandoned.
Claims3
In a method for preparing transparent, electrically conducting tin-doped indium oxide (In.sub.2 O.sub.3) layers on temperature-sensitive substrates through high-frequency cathode sputtering of indium/tin alloy targets in a vacuum, using a reaction gas, the improvement comprising utilizing water vapor having a pressure in the range of from 3.times.10.sup.-3 mbar to 5.times.10.sup.-3 mbar as the reaction gas, and water-cooling the temperature-sensitive substrates during the deposition.
Dependencies are inferred from the claim text.