# US 4,400,244 A · Photo-voltaic power generating means and methods > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 4,400,244 A - Document ID: US4400244A - Status: Granted - Kind: A - Application number: 06/367,723 - Filed: 1982-04-08 - Granted: 1983-08-23 - Earliest claimed: 1976-06-08 - Assignees: Monosolar, Inc. - Inventors: Ferdinand A. Kroger; Robert L. Rod; M. P. Ramachandra Panicker - Web page: https://patentgrep.com/patent/US4400244A ## CPC - H10F 71/1253: {comprising at least three elements, e.g. HgCdTe} - H10F 10/14: Photovoltaic cells having only PN homojunction potential barriers - H10F 71/125: {The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe} - H10P 14/265: {using solutions} - H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers} - H10P 14/3241: {being conductive materials} - H10P 14/3424: {being Group IIB-VIA materials} - H10P 14/3441: {Conductivity type} - Y02E 10/543: Solar cells from Group II-VI materials - Y02E 10/547: Monocrystalline silicon PV cells - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract A photo-voltaic power cell based on a photoelectric semiconductor compound and the method of using and making the same. The semiconductor compound in the photo-voltaic power cell of the present invention can be electrolytically formed at a cathode in an electrolytic solution by causing discharge or decomposition of ions or molecules of a non-metallic component with deposition of the non-metallic component on the cathode and simultaneously providing ions of a metal component which discharge and combine with the non-metallic component at the cathode thereby forming the semiconductor compound film material thereon. By stoichiometrically adjusting the amounts of the components, or otherwise by introducing dopants into the desired amounts, an N-type layer can be formed and thereafter a P-type layer can be formed with a junction therebetween. The invention is effective in producing homojunction semiconductor materials and heterojunction semiconductor materials. The present invention also provides a method of using three electrodes in order to form the semiconductor compound material on one of these electrodes. Various examples are given for manufacturing different photo-voltaic cells in accordance with the present invention. ## Claims ### Claim 1 A method of preparing a photo-voltaic power generating cell, comprising: utilizing an electrode as a substrate and having a conductive coating of a semiconductor material of a first conductivity type; depositing electrochemically on said electrode a coating of at least one semiconductor compound from an electrolytic bath including the components of said semiconductor compound, said at least one semiconductor compound being (a) of the opposite conductivity type, (b) capable of forming a photo-voltaic junction with said conductive coating, (c) transmissive to light radiation, and (d) capable of forming electron-hole pairs upon being irradiated with photons, said components of said at least one semiconductor compound being formed of at least one of the metal elements of Class IIB and at least one of the non-metal elements of Class VIA of the Periodic Table of Elements. ### Claim 2 (depends on 1) A method as defined in claim 1 wherein said conductive coating is transmissive to light radiation. ### Claim 3 (depends on 1) A method as defined in claim 1 wherein said conductive coating is n-type and said at least one semiconductor compound is p-type. ### Claim 4 (depends on 1) A method as defined in claim 1 wherein said conductive coating is p-type and said at least one semiconductor compound is n-type. ### Claim 5 (depends on 1) A method as defined in claim 1 wherein at least a portion of the metal and non-metal components is provided from materials dissolved in said electrolytic bath. ### Claim 6 (depends on 1) A method as defined in claim 1 wherein at least a portion of the metal or non-metal components is provided from an additional electrode immersed in said electrolytic bath. ### Claim 7 (depends on 1) A method as defined in claim 1 which includes the step of forming the at least one semiconductor compound of a selected conductivity type of depositing an increased concentration of the corresponding metal element or non-metal element, depending on the selected conductivity type. ### Claim 8 (depends on 1) A method as defined in claim 1 which includes forming the at least one semiconductor compound material of a selected conductivity type by codepositing with it a doping impurity of the donor or acceptor type corresponding to the selected conductivity type. ### Claim 9 (depends on 1) A method as defined in claim 1 which includes forming the at least one semiconductor compound having a selected conductivity type by depositing an increased concentration of the corresponding metal element or non-metal element and codepositing with it a corresponding doping impurity of the donor or acceptor type, depending on the selected conductivity type. ### Claim 10 A method of preparing a photo-voltaic power generating cell, comprising: depositing electrochemically on an electrode a coating of at least one semiconductor compound from an electrolytic bath including the components of said at least one semiconductor compound, said at least one compound being (a) capable of forming a photo-voltaic junction, (b) transmissive to light radiation, and (c) capable of forming electron-hole pairs upon being irradiated with photons, said components being formed of at least one of the metal elements of Class IIB and one of the non-metal elements of Class VIA of the Periodic Table of Elements, said at least one semiconductor compound being deposited in such a manner that it forms a first layer of a first conductivity type, and subsequently similarly depositing electrochemically a second layer of the same at least one compound but of the opposite conductivity type, said photo-voltaic junction being between said layers. ### Claim 11 (depends on 10) A method as defined in claim 10 wherein at least a portion of the metal and non-metal components is provided from materials dissolved in said electrolytic bath. ### Claim 12 (depends on 10) A method as defined in claim 10 wherein at least a portion of the metal or non-metal components is provided from an additional electrode immersed in said electrolytic bath. ### Claim 13 (depends on 10) A method as defined in claim 10 which includes the step of forming the at least one semiconductor compound of a selected conductivity type by depositing an increased concentration of the corresponding metal element or non-metal element, depending on the selected conductivity type. ### Claim 14 (depends on 10) A method as defined in claim 10 which includes forming the at least one semiconductor compound material of a selected conductivity type by codepositing with it a doping impurity of the donor or acceptor type corresponding to the selected conductivity type. ### Claim 15 (depends on 10) A method as defined in claim 10 which includes forming the at least one semiconductor compound having a selected conductivity type by depositing an increased concentration of the corresponding metal element or non-metal element and codepositing with it a corresponding doping impurity of the donor or acceptor type, depending on the selected conductivity type. ### Claim 16 (depends on 10) A method as defined in claim 10 wherein said first layer is n-type and said second layer is p-type. ### Claim 17 (depends on 10) A method as defined in claim 10 wherein said first layer is p-type and said second layer is n-type.