# US 4,399,542 A · Transverse junction stripe laser with distributed Bragg reflectors

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- Number: US 4,399,542 A
- Document ID: US4399542A
- Status: Granted
- Kind: A
- Application number: 06/239,845
- Filed: 1981-03-02
- Granted: 1983-08-16
- Earliest claimed: 1981-03-02
- Assignees: Honeywell Inc.
- Inventors: Hideo Kawanishi
- Web page: https://patentgrep.com/patent/US4399542A

## CPC

- H01S 5/2203: {with a transverse junction stripe [TJS] structure}
- H01S 5/125: Distributed Bragg reflector [DBR] lasers
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A solid state AlGaAs laser of the transverse junction stripe with distributed Bragg reflector type.

## Claims

### Claim 1

A transverse junction stripe (TJS) laser having thereon a distributed Bragg reflector including a layer of GaAs comprising a heavily doped p-GaAs active region and a lightly doped n-GaAs region which acts as a low loss optical passive waveguide for laser light emitted in the heavily doped p-region, wherein the layer of GaAs is sandwiched between layers of Al.sub.x Ga.sub.1-x As, and wherein the sandwiched layers are elongated and the heavily doped p-GaAs active region is located intermediate a lightly doped n-GaAs region on either end and wherein two distributed Bragg reflectors are etched on the surface of the Al.sub.x Ga.sub.1-x As layer in the proximity of the light doped n-GaAs regions, and a pair of ohmic contacts thereon to provide for energization of the TJS laser.

### Claim 2

A trasverse junction stripe (TJS) laser having thereon a distributed Bragg reflector including a layer of GaAs comprising a heavily doped p-GaAs active region and a lightly doped n-GaAs region which acts as a low loss optical passive waveguide for laser light emitted in the heavily doped p-region, wherein the layer of GaAs is sandwiched between layers of Al.sub.x Ga.sub.1-x As, and wherein the sandwiched layers are elongated with the heavily doped p-GaAs active region being spaced from the lightly doped n-GaAs region, wherein a distributed Bragg reflector is etched on the surface of the Al.sub.x Ga.sub.1-x As layer in the proximity of the lightly doped n-GaAs region, and wherein the sandwiched layers are cleaved at the location of the active region to provide a facet through which lasing light may output, and a pair of ohmic contacts thereon to provide for energization of the TJS laser.

### Claim 3

A transverse junction stripe laser with distributed Bragg reflector comprising:
a substrate of single crystal n-GaAs;
a first layer of n-Al.sub.x Ga.sub.1-x As epitaxially grown on said substrate;
a second layer of n-GaAs expitaxially grown on said first layer;
a third layer of n-Al.sub.x Ga.sub.1-x As epitaxially grown on said second layer and having a surface;
a portion of the surface area of said third layer etched to form at the surface of said third layer a distributed Bragg reflector;
an insulating layer sputtered onto said third layer surface; and,
A Zn diffused area extending downward from a window in said insulating layer through a portion of said third layer, said second layer and into said first layer thereby making a vertical p+, p, n region; and,
two ohmic contacts one to the top p-Al.sub.x Ga.sub.1-x As layer and one to the bottom n-GaAs layer.