# US 4,399,520 A · Semiconductor integrated circuit device

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- Number: US 4,399,520 A
- Document ID: US4399520A
- Status: Granted
- Kind: A
- Application number: 06/235,859
- Filed: 1981-02-19
- Granted: 1983-08-16
- Earliest claimed: 1980-02-22
- Assignees: Tokyo Shibaura Denki Kabushiki Kaisha
- Inventors: Shoji Ariizumi; Makoto Segawa; Hisaaki Maiwa; Seishi Okamoto
- Web page: https://patentgrep.com/patent/US4399520A

## CPC

- G11C 11/403: with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C 11/412: using field-effect transistors only
- G11C 19/18: using capacitors as main elements of the stages {(if capacitors are used as auxiliary stage in between main stages with other elements, the latter take precedence; G11C19/005 takes precedence)}
- H10B 99/22: {including field-effect components}
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A semiconductor integrated circuit having a memory and an adjacent peripheral circuit generating minority carriers which can destroy data in a portion of the memory at low temperatures. The load resistance in the portion is made lower or the storage capacity is made higher in the portion than in the remainder of the memory so that at low temperatures data is not lost and the energy consumption of the circuit is not unduly increased.

## Claims

### Claim 1

A semiconductor integrated circuit having a memory made up of individual elements having associated circuit values and a peripheral circuit generating minority carriers which influence some of the elements making up a portion of said memory wherein said elements are formed so that the values of at least one of said circuit elements are set in said portion different from the values in the remainder of said memory so that the effect of the influence is reduced in said portion so stored data, which would be otherwise lost if the values were the same as in the remainder of the memory, is not lost.

### Claim 2 (depends on 1)

A semiconductor integrated circuit device as in claim 1, wherein said elements are resistors and are formed using polycrystalline silicon, and the value of the resistance of each element in said portion is less than the value of the resistance in the remainder of said memory.

### Claim 3 (depends on 1)

A semiconductor integrated circuit device as in claim 1, wherein elements are capacitors and are formed to provide storage capacities, and the storage capacities in said portion being more than the storage capacities in the remainder of said memory.