# US 4,399,448 A · High sensitivity photon feedback photodetectors

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- Number: US 4,399,448 A
- Document ID: US4399448A
- Status: Granted
- Kind: A
- Application number: 06/230,873
- Filed: 1981-02-02
- Granted: 1983-08-16
- Earliest claimed: 1981-02-02
- Assignees: Bell Telephone Laboratories, Incorporated
- Inventors: John A. Copeland, III
- Web page: https://patentgrep.com/patent/US4399448A

## CPC

- H10F 30/26: the devices having three or more potential barriers, e.g. photothyristors
- H10F 30/2255: {in which the active layers form heterostructures, e.g. SAM structures}
- H10F 55/18: {wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Large current gains and high degrees of sensitivity to impinging primary photons are realized in photon feedback photodetectors embodying the invention. A photocurrent generated by an internal photodiode (10, 11) in response to the primary photons (6) causes secondary photons to be emitted by internal serially connected luminescence diodes (12, 13; 14, 15). Secondary photons traveling away from the photodiode are redirected by a reflector (16) to impinge on the photodiode and thereby sustain the photocurrent. Gains of the order of 100 are realized by these photodetectors.

## Claims

### Claim 1

An optoelectronic device comprising a substrate and at least four abutting layers of semiconductor material grouped into a sequence of pairs of layers, each pair being arranged as a first layer and a second layer, the substrate abutting one layer of the pairs of layers and being comprised of a semiconductor material having a similar conductivity type to that of the abutting layer of the pairs of layers,
electrode means for applying a bias potential across the sequence of pairs of layers,
the first layer of each pair being composed of semiconductor material having a conductivity type opposite to that of the second layer in the corresponding pair, the first and second layers within each pair having substantially equal bandgaps,
the first layer of each pair in the sequence of pairs being comprised of similar conductivity type semiconductor material to the second layer of each immediately adjacent pair of layers, and the bandgap of the first layer of each pair being substantially dissimilar to the bandgap of the second layer of each immediately adjacent pair,
characterized in that
a reflective coating layer abuts an outermost layer of the sequence of pairs of layers.

### Claim 2 (depends on 1)

The device as defined in claim 1 wherein the outermost layer of the sequence of pairs is a first layer of a pair of layers having a wide bandgap.

### Claim 3 (depends on 2)

The combination as defined in claim 2 wherein the first layer of each pair is of substantially equal thickness to the second layer of each immediately adjacent pair of layers.

### Claim 4 (depends on 2)

The device as defined in claim 2 wherein the reflective coating layer includes a first layer of titanium and a second layer of gold abutting therewith.

### Claim 5

An optoelectronic comprising a substrate and at least six abutting layers of semiconductor material grouped into a sequence of pairs of layers, each pair being arranged as a first layer and a second layer, the substrate abutting one layer of the pairs of layers and being comprised of a semiconductor material having a similar conductivity type to that of the abutting layer,
electrode means for applying a bias potential across the sequence of pairs of layers,
the first layer of each pair being composed of semiconductor material having a conductivity type opposite to that of the second layer in the corresponding pair, the first and second layers within each pair having substantially equal bandgaps,
characterized in that
the first layer of each pair in the sequence of pairs is composed of similar conductivity type semiconductor material to the second layer of each immediately adjacent pair of layers, and
the bandgap of the first layer of each pair is substantially dissimilar to the bandgap of the second layer of each immediately adjacent pair.

### Claim 6 (depends on 5)

The device as defined in claim 5 further characterized in that,
a reflective coating layer abuts a first outermost layer of the sequence of pairs of layers.

### Claim 7 (depends on 6)

The device as defined in claim 6 wherein the first outermost layer of the sequence of pairs is a first layer of a pair of layers having a wide bandgap and at a contraposition to the substrate.

### Claim 8 (depends on 7)

The combination as defined in claim 7 wherein the reflective coating layer includes a first layer of titanium and a second layer of gold abutting therewith, the first layer of titanium abutting the first outermost layer.