# US 4,399,345 A · Laser trimming of circuit elements on semiconductive substrates

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- Number: US 4,399,345 A
- Document ID: US4399345A
- Status: Granted
- Kind: A
- Application number: 06/272,054
- Filed: 1981-06-09
- Granted: 1983-08-16
- Earliest claimed: 1981-06-09
- Assignees: Analog Devices, Inc.
- Inventors: Jerome F. Lapham; Tommy D. Clark
- Web page: https://patentgrep.com/patent/US4399345A

## CPC

- H01C 17/242: by laser
- H01C: RESISTORS

## Abstract

A method of laser trimming thin film resistors on semiconductive substrates wherein the laser is set to a frequency equal to or less than E.sub.g /h, where E.sub.g is the optical band-gap energy of the doped semiconductor substrate, and h is Planck's constant.

## Claims

### Claim 1

The method of laser trimming of elements on a doped semiconductive substrate, wherein a laser beam is directed onto the element from the side of the substrate carrying the element and is so controlled as to vaporize or otherwise remove or alter the material of the element so as to achieve a predetermined electrical characteristic for the element; said method further comprising the step of setting the frequency of the laser at a value no greater than E.sub.g /h, where E.sub.g is the optical band-gap energy of the doped substrate and h is Planck's constant.

### Claim 2

The method of laser trimming of elements on a doped semiconductive substrate, wherein a laser beam is directed onto the element from the side of the substrate carrying the element and is so controlled as to vaporize or otherwise remove or alter the material of the element so as to achieve a predetermined electrical characteristic for the element; said method comprising the step of setting the laser to operate at a wavelength producing photons having an energy less than the optical band-gap energy of the doped substrate.

### Claim 3 (depends on 2)

The method of claim 2, wherein the substrate is Silicon, and said laser wavelength is greater than 1.065 microns and is set at a value resulting in an absorption coefficient for said doped substrate at least 10:1 less than the absorption coefficient at 1.065 microns.

### Claim 4 (depends on 3)

The method of claim 3, wherein said laser wavelength is set at a value of at least 1.1 microns.

### Claim 5 (depends on 4)

The method of claim 4, wherein said laser wavelength is set at a value between 1.1 microns and 10 microns.

### Claim 6 (depends on 5)

The method of claim 5, wherein said elements are thin-film resistors, and said laser wavelength is set at a value within the range of from 1.1 microns to 9 microns.

### Claim 7 (depends on 3)

The method of claim 3, wherein said laser beam is produced by a YAG neodynium doped laser operated at a wavelength of about 1.34 microns.