# US 4,399,116 A · Zone purification of silicon in a reactive plasma

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- Number: US 4,399,116 A
- Document ID: US4399116A
- Status: Granted
- Kind: A
- Application number: 06/287,789
- Filed: 1981-07-28
- Granted: 1983-08-16
- Earliest claimed: 1980-08-08
- Assignees: Electricite de France (Service National)
- Inventors: Jacques Amouroux; Daniel Morvan
- Web page: https://patentgrep.com/patent/US4399116A

## CPC

- C30B 29/06: Silicon
- C30B 13/22: by irradiation or electric discharge
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

Boron is removed from silicon by zone melting purification. A jet of hot plasma obtained by high frequency excitation is directed on a zone of a bar of silicon to be purified. The plasma is formed from a mixture of a plasma-producing gas, such as argon, and an amount of oxygen which is sufficiently low to avoid oxidization of silicon.

## Claims

### Claim 1

A process for zone melting purification of silicon, comprising the steps of melting a zone of a bar of silicon to be purified by directing a jet of hot plasma obtained by high frequency excitation onto said zone and moving the jet and bar with respect to each other so as to cause the melted zone to travel along the bar, wherein the plasma is formed from a mixture of a plasma-producing gas and a sufficiently small amount of oxygen to avoid substantial oxidation of silicon.

### Claim 2 (depends on 1)

A process according to claim 1 for boron removal, wherein the oxygen percentage of the plasma is adjusted to a value between 100 times and 300 times the boron percentage in said silicium.

### Claim 3 (depends on 1)

A process according to claim 1, wherein the oxygen percentage of the plasma is adjusted to a value between 0.005% and 0.1%.

### Claim 4 (depends on 1, 2)

A process according to claim 1 or 2, wherein the plasma is created by a purely inductive process without electrodes.

### Claim 5 (depends on 1)

A process according to claim 1, further comprising the steps of cleaning the ingot with acid to remove any boron compounds drawn to the surface of the ingot by zone melting.

### Claim 6 (depends on 1)

A process according to claim 1, wherein hydrogen is added to the plasma-producing gas and to the oxygen in the plasma.

### Claim 7 (depends on 1)

A process according to claim 1, further comprising the step of processing the ingot with a plasma containing no oxygen to eliminate defects after treatment with plasma containing oxygen.