# US 4,398,974 A · Temperature gradient zone melting process employing a buffer layer

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- Number: US 4,398,974 A
- Document ID: US4398974A
- Status: Granted
- Kind: A
- Application number: 06/366,900
- Filed: 1982-04-09
- Granted: 1983-08-16
- Earliest claimed: 1982-04-09
- Assignees: Hughes Aircraft Company
- Inventors: Kuen Chow; Jan Grinberg
- Web page: https://patentgrep.com/patent/US4398974A

## CPC

- C30B 13/02: Zone-melting with a solvent, e.g. travelling solvent process
- H10P 95/50: {Alloying conductive materials with semiconductor bodies}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A process is provided for fabricating a semiconductor device by thermal gradient zone melting, whereby metal-rich droplets such as aluminum migrate through a semiconductor wafer such as silicon to create conductive paths. One surface of the wafer in provided with a buffer layer thereon, which is placed directly on a heating surface. The buffer layer terminates the migration of the droplets to prevent alloying of the droplets with the heating surface.

## Claims

### Claim 1

In the process for fabricating a semiconductor device by thermal gradient zone melting wherein said process comprises the steps of:
selecting a wafer body of suitable semiconductor material which is of one type of conductivity, said body having two major generally parallel opposed surfaces, said opposed surfaces being respectively the top and bottom surfaces;
depositing an array of droplets in solid form on said top surface, said droplets comprising suitable metal-rich conductive material which is of an opposite type of conductivity;
heating said wafer body and said droplets to a sufficient temperature for simultaneously
(a) establishing a thermal gradient through said wafer body wherein said bottom surface is at a higher temperature than said top surface, and
(b) melting said droplets to enable migration of said droplets through said wafer body toward said bottom surface; and
removing heat from said top surface to enhance the establishment of said thermal gradient, whereby said droplets form column-like paths the conductivity of which is opposite to the conductivity of said wafer body, the improvement which comprises:
applying a layer of suitable buffer material on the entire area of said bottom surface, said buffer layer having the characteristic of being insoluble with said droplets; and
placing said wafer body on a generally planar surface of heating means with the entire area of said bottom surface having said buffer layer thereon directly on said heating surface,
whereby said buffer layer terminates said migration of said droplets to prevent alloying of said droplets with said heating surface.

### Claim 2

In the process for fabricating a semiconductor device by thermal gradient zone melting, the improvement comprises:
applying a layer of suitable buffer material on the entire area of a surface of a wafer body such that said buffer layer is interposed between said surface and heating means, said buffer layer having the characteristic of being insoluble with said droplets,
whereby said buffer layer terminates the migration of droplets through said wafer body toward said heating means.

### Claim 3 (depends on 1, 2)

The process as claimed in claim 1 or 2 further comprises the step of:
removing said buffer layer.

### Claim 4 (depends on 3)

The process as claimed in claim 3, wherein
said buffer layer comprises a material selected from the group consisting of silicon dioxide and aluminum oxide.

### Claim 5 (depends on 4)

The process as claimed in claim 4, wherein
said wafer body comprises silicon.

### Claim 6 (depends on 5)

The process as claimed in claim 5, wherein
said wafer body comprises n-type silicon and said droplets comprise aluminum.