# US 4,398,335 A · Multilayer metal silicide interconnections for integrated circuits

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- Number: US 4,398,335 A
- Document ID: US4398335A
- Status: Granted
- Kind: A
- Application number: 06/214,615
- Filed: 1980-12-09
- Granted: 1983-08-16
- Earliest claimed: 1980-12-09
- Assignees: Fairchild Camera and Instrument Corporation
- Inventors: William I. Lehrer
- Web page: https://patentgrep.com/patent/US4398335A

## CPC

- H10W 20/066: {by forming silicides of refractory metals}
- H10W 20/031: {of conductive parts of the interconnections}
- H10W 20/42: Vias, e.g. via plugs
- H10W 20/4441: {the principal metal being a refractory metal}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A process and resulting structure are disclosed for forming vias in integrated circuit structures using metal silicide interconnections. A lower conductor is formed by sequentially depositing silicon and a refractory metal which reacts with the silicon to create a layer of metal silicide. A subsequent layer of silicon is deposited on the surface of the metal silicide. This layer of silicon is insulated from overlying layers by forming insulating material over desired regions of the layer of silicon. A second layer of metal is then deposited across the structure. In openings in the insulating material the metal reacts with the second layer of silicon to form a via of metal silicide. A final layer of silicon may be deposited to convert any remaining metal in the second layer of metal to metal silicide, and the structure annealed to lower its resistivity.

## Claims

### Claim 1

A method of fabricating an electrical connection between two conducting layers in an integrated circuit structure comprising:
forming a first conducting layer of a metal silicide on the integrated circuit structure;
depositing a layer of silicon on the first conducting layer;
depositing a layer of a metal which reacts with silicon on selected regions of the layer of silicon to thereby form regions of metal silicide at the selected regions.

### Claim 2 (depends on 1)

A method as in claim 1 wherein prior to the step of depositing a layer of a metal a layer of insulating material is formed over all of the layer of silicon except the selected regions.

### Claim 3 (depends on 2)

A method as in claim 2 wherein the layer of metal is also deposited over the insulating material.

### Claim 4 (depends on 1)

A method as in claim 1 wherein the step of forming the first conducting layer is performed by depositing a layer of silicon followed by depositing a layer of metal which reacts with the layer of silicon to form the metal silicide.

### Claim 5 (depends on 1)

A method as in claim 1 followed by the step of annealing to lower the resistivity of the metal silicide.

### Claim 6 (depends on 1)

A method as in claim 1 wherein the layer of silicon comprises polycrystalline silicon.

### Claim 7 (depends on 1)

A method as in claim 1 wherein the metal silicide is formed using one metal from the group consisting of tungsten, molybdenum, tantalum, titanium, and niobium.

### Claim 8 (depends on 7)

A method as in claim 7 wherein the regions of metal silicide at the selected regions are formed using one metal from the group consisting of tungsten, molybdenum, tantalum, titanium, and niobium.

### Claim 9 (depends on 1)

A method as in claim 1 followed by the step of depositing an additional layer of silicon over the layer of metal.

### Claim 10 (depends on 9)

A method as in claim 9 wherein the additional layer of silicon comprises polycrystalline silicon.

### Claim 11 (depends on 1)

A method as in claim 1 wherein both the metal silicide in the first conducting layer and the regions of metal silicide at the selected regions comprise the same type of metal silicide.

### Claim 12

A method of fabricating an electrical connection between a first conducting layer and a second conducting layer in an integrated circuit structure comprising:
depositing a first layer of silicon on the integrated circuit structure;
depositing a first layer of metal which reacts with the first layer of silicon to form a first layer of metal silicide, the first layer of metal silicide comprising the first conducting layer;
depositing a second layer of silicon on the first layer of metal silicide;
forming regions of insulating material on the second layer of silicon; and
depositing a second layer of metal to form a second layer of metal silicide wherever the second layer of metal contacts the second layer of silicon, the second layer of metal and metal silicide comprising the second conducting layer.

### Claim 13 (depends on 12)

A method as in claim 12 followed by the step of depositing a third layer of silicon.

### Claim 14 (depends on 13)

A method as in claim 13 followed by the step of annealing the first layer of metal silicide and the second layer of metal silicide to lower their respective resistances.

### Claim 15 (depends on 12)

A method as in claim 12 wherein the silicon in the first layer and in the second layer comprises polycrystalline silicon.