# US 4,398,142 A · Kelvin-connected buried zener voltage reference circuit

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- Number: US 4,398,142 A
- Document ID: US4398142A
- Status: Granted
- Kind: A
- Application number: 06/310,035
- Filed: 1981-10-09
- Granted: 1983-08-09
- Earliest claimed: 1981-10-09
- Assignees: Harris Corporation
- Inventors: James D. Beasom
- Web page: https://patentgrep.com/patent/US4398142A

## CPC

- H10D 84/617: {Combinations of vertical BJTs and only diodes}
- G05F 3/18: using Zener diodes
- Y10S 323/907: Temperature compensation of semiconductor
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G05F: SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

An improved voltage reference circuit is provided comprising a series combination of a Kelvin-connected buried zener diode and a transistor. The collector of the transistor is connected to the first anode of the diode while the base of the transistor is connected to the second anode of the diode. This connection provides compensation for temperature and voltage variations in the zener diode caused by anode parasitic resistances and external temperature changes.

## Claims

### Claim 1

A voltage reference circuit comprising:
a buried zener diode having first and second anodes and a cathode, said first and second anodes having inherent parasitic resistances; and
a transistor having a base, collector, and emitter, said collector connected to said first anode, said base connected to said second anode, said transistor serving to compensate for voltage variations in said zener diode caused by said parasitic resistances and external temperature changes.

### Claim 2 (depends on 1)

A voltage reference circuit as described in claim 1 wherein said buried zener diode has a P-type buried layer and an N-type surface layer such that the PN junction of said diode is buried.

### Claim 3 (depends on 2)

A voltage reference circuit as described in claim 2 wherein said transistor is an NPN bipolar transistor.

### Claim 4 (depends on 1)

A voltage reference circuit as described in claim 1 wherein said buried zener diode has an N-type buried layer and a P-type surface layer such that the PN junction of said diode is buried.

### Claim 5 (depends on 4)

A voltage reference circuit as described in claim 4 wherein said transistor is a PNP bipolar transistor.

### Claim 6 (depends on 1)

A voltage reference circuit as described in claim 1 wherein said buried zener diode and said transistor are formed on the same monolithic chip to improve the sensitivity of said circuit.

### Claim 7 (depends on 1)

A voltage reference circuit as described in claim 1 wherein said transistor and said buried zener diode have opposite temperature coefficients to compensate said circuit for said external temperature changes.

### Claim 8 (depends on 1)

A voltage reference circuit as described in claim 1 wherein said first anode has a lower inherent parasitic resistance than said second anode.