# US 4,398,114 A · Surface-acoustic-wave parametric device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 4,398,114 A - Document ID: US4398114A - Status: Granted - Kind: A - Application number: 06/218,379 - Filed: 1980-12-19 - Granted: 1983-08-09 - Earliest claimed: 1979-12-24 - Assignees: Clarion Co., Ltd. - Inventors: Shoichi Minagawa; Takeshi Okamoto - Web page: https://patentgrep.com/patent/US4398114A ## CPC - H03H 9/6403: {Programmable filters} - H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P) ## Abstract A surface-acoustic-wave parametric device includes in that a plurality of pumping electrodes arranged along a propagation path of surface acoustic wave. Values of DC bias voltages to be applied to the respective pumping electrodes for forming parametric interaction regions, or values of pumping voltages to be applied to the pumping electrodes, are differentiated so as to correspond to a desired frequency characteristic. ## Claims ### Claim 1 A surface-acoustic-wave parametric device which comprises: a laminate which includes a semiconductor layer and a piezoelectric layer; means for propagating a surface acoustic wave along a path in said laminate; a plurality of spaced pumping electrodes provided along said surface-acoustic-wave propagating path in said laminate; means for applying pumping voltages to said pumping electrodes; and means for applying DC bias voltages of different, predetermined values to respective said pumping electrodes, said DC bias voltage values being selected so that an output frequency characteristic of said device corresponds to the impulse response thereof. ### Claim 2 A surface-acoustic-wave parametric device which comprises: a laminate which includes a semiconductor layer and a piezoelectric layer; means for propagating a surface acoustic wave along a path in said laminate; a plurality of spaced pumping electrodes provided along said surface-acoustic-wave propagating path in said laminate; means for applying DC bias voltages to said pumping electrodes; and means for applying AC pumping voltages of different, predetermined values to respective said pumping electrodes, said predetermined pumping voltage values being selected so that an output frequency characteristic of said device corresponds to the impulse response thereof. ### Claim 3 (depends on 1, 2) A surface-acoustic-wave parametric device according to claim 1 or claim 2, wherein said pumping electrodes are each rectangular and are arranged with the long sides thereof parallel with each other. ### Claim 4 (depends on 1) A surface-acoustic-wave parametric device according to claim 1, wherein said means for applying DC bias voltages includes a plurality of DC power sources, said DC power sources being connected to respective said pumping electrodes. ### Claim 5 (depends on 1) A surface-acoustic-wave parametric device according to claim 1, wherein said means for applying DC bias voltages includes a DC power source and a plurality of voltage regulating means, said DC power source being connected to each said pumping electrode by a respective said voltge regulating means. ### Claim 6 (depends on 5) A surface-acoustic-wave parametric device according to claim 5, wherein each said voltage regulating means is a film resistor integrated on a common plane with said pumping electrodes. ### Claim 7 (depends on 2) A surface-acoustic-wave parametric device according to claim 2, wherein said means for applying pumping voltages includes a plurality of pumping power sources connected to respective said pumping electrodes. ### Claim 8 (depends on 2) A surface-acoustic-wave parametric device according to claim 2, wherein said means for applying pumping voltages includes at least one pumping power source and a plurality of impedance circuits having different impedance values, said pumping power source being connected to each said pumping electrode by a respective said impedance circuit. ### Claim 9 (depends on 8) A surface-acoustic-wave parametric device according to claim 8, wherein said impedance circuits are capacitors having different capacitance values. ### Claim 10 (depends on 9) A surface-acoustic-wave parametric device according to claim 9, wherein said capacitors are thin film capacitors integrated on a common plane with said pumping electrodes. ### Claim 11 (depends on 1, 2) A surface-acoustic-wave parametric device according to claim 1 or claim 2, wherein said means for propagating a surface-acoustic-wave includes spaced input and output transducers, said pumping electrodes being located between said transducers. ### Claim 12 (depends on 1, 2) A surface-acoustic-wave parametric device according to claim 1 or claim 2, wherein said means for propagating a surface acoustic wave includes means for inputting a surface acoustic wave into said laminate and means for deriving an output surface acoustic wave from said laminate, said means for deriving an output surface acoustic wave being adapted to derive a surface acoustic wave which is produced by said inputted surface acoustic wave, which has a frequency corresponding to a band-pass portion of said frequency characteristic and which travels in a direction opposite to said input surface acoustic wave. ### Claim 13 (depends on 9) A surface-acoustic-wave device according to claim 9, wherein said capacitors also block direct current. ### Claim 14 (depends on 1, 2) A surface-acoustic-wave device according to claim 1 or claim 2, wherein said semiconductor layer is made of silicon and said piezoelectric layer is one of zinc oxide and aluminum nitride. ### Claim 15 (depends on 1, 2) A surface-acoustic-wave parametric device according to claim 1 or claim 2, which further comprises an insulating film interposed between said semiconductor layer and said piezoelectric layer for passivating the surface of said semiconductor layer, said insulating film being made of silicon dioxide. ### Claim 16 (depends on 1) The surface-acoustic-wave parametric device according to claim 1, wherein said DC bias voltages applied to said pumping electrodes decrease successively from the outermost pumping electrodes toward the central pumping electrodes. ### Claim 17 (depends on 2) The surface-acoustic-wave parametric device according to claim 2, wherein said AC pumping voltages applied to said pumping electrodes increase successively from the outermost pumping electrodes to the central pumping electrodes. ### Claim 18 A method of adjusting the frequency response of a surface-acoustic-wave device which includes a laminate having a semiconductor layer and a piezoelectric layer, means for propagating a surface acoustic wave along a path in said laminate, and a plurality of spaced pumping electrodes provided along said path, comprising the steps of applying an AC pumping voltage to each said pumping electrode, applying a respective DC bias voltage to each said pumping electrode, and selecting said DC bias voltages so that an output frequency characteristic of said device is approximately equivalent to the impulse response thereof. ### Claim 19 A method of adjusting the frequency response of a surface-acoustic-wave device which includes a laminate having a semiconductor layer and a piezoelectric layer, means for propagating a surface acoustic wave along a path in said laminate, and a plurality of spaced pumping electrodes provided along said path, comprising the steps of applying a DC bias voltage to each said pumping electrode, applying a respective AC pumping voltage to each said pumping electrode, and selecting said AC pumping voltages so that an output frequency characteristic of said device is approximately equivalent to the impulse response thereof.