# US 4,397,933 A · Hydrogenated amorphous silicon photoconductive layer

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- Number: US 4,397,933 A
- Document ID: US4397933A
- Status: Granted
- Kind: A
- Application number: 06/302,454
- Filed: 1981-09-15
- Granted: 1983-08-09
- Earliest claimed: 1978-12-28
- Assignees: Canon Kabushiki Kaisha
- Inventors: Masao Sugata; Masaki Fukaya; Takashi Nakagiri; Takaaki Yamagata; Yutaka Hirai
- Web page: https://patentgrep.com/patent/US4397933A

## CPC

- H10F 30/15: {comprising amorphous semiconductors}
- C23C 16/5096: {Flat-bed apparatus}
- G03G 5/08214: {Silicon-based}
- G03G 5/08221: {comprising one or two silicon based layers}
- G03G 5/104: {comprising inorganic material other than metals, e.g. salts, oxides, carbon}
- H10F 71/103: {including only Group IV materials}
- Y02E 10/50: Photovoltaic [PV] energy
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- G03G: ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

The hydrogenated amorphous silicon photoconductive layer has an infrared spectrum containing a peak at 880.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.A) and a peak at 970.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.B) in the infrared spectrum, the ratio I.sub.A /I.sub.B, being not more than 1.0.

## Claims

### Claim 1

A hydrogenated amorphous silicon photoconductive layer formed on a support, said layer exhibiting infrared absorption peaks at 880.+-.10 cm.sup.-1 corresponding to a normalized mode of a bending mode of an SiH.sub.2 bond and having an intensity I.sub.A and at 970.+-.10 cm.sup.-1 corresponding to the overlap of a peak of a normalized mode of a deformation mode of an SiH bond and a peak which an Si-O bond is concerned and having an intensity I.sub.B, wherein the ratio, I.sub.A /I.sub.B, is not more than 1.0.

### Claim 2 (depends on 1)

A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which the ratio, I.sub.A /I.sub.B, is not more than 0.9.

### Claim 3 (depends on 1)

A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which the ratio, I.sub.A /I.sub.B, is not more than 0.8.

### Claim 4 (depends on 1)

A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which the ratio, I.sub.A /I.sub.B, is in the range of 0.2-1.0.

### Claim 5 (depends on 1)

A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which the ratio, I.sub.A /I.sub.B, is in the range of 0.3-0.9.

### Claim 6 (depends on 1)

A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which the ratio, I.sub.A /I.sub.B, is in the range of 0.4-0.9.

### Claim 7 (depends on 1)

A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which said support is a conductive support.

### Claim 8 (depends on 1)

A hydrogenated amorphous silicon photoconductive layer according to claim 1 in which said support is an insulating support.

### Claim 9 (depends on 8)

A hydrogenated amorphous silicon photoconductive layer according to claim 8 in which said insulating support has a conductive coating thereon on which said photoconductive layer is formed.