# US 4,397,912 A · Garnet film for magnetic bubble element

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- Number: US 4,397,912 A
- Document ID: US4397912A
- Status: Granted
- Kind: A
- Application number: 06/278,700
- Filed: 1981-06-29
- Granted: 1983-08-09
- Earliest claimed: 1980-06-27
- Assignees: Hitachi, Ltd.
- Inventors: Norio Ohta; Keikichi Ando; Yuzuru Hosoe; Yutaka Sugita
- Web page: https://patentgrep.com/patent/US4397912A

## CPC

- H01F 10/24: Garnets
- H01F 41/28: by liquid phase epitaxy
- Y10S 428/90: Magnetic feature
- Y10S 428/91: Product with molecular orientation
- Y10T 428/265: 1 mil or less
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

Herein disclosed is a magnetic garnet film for a magnetic bubble element, in which the temperature changing rate of a bubble collapse field is reduced by Gd and Ga and in which the operating characteristics of the bubbles are improved by La and Lu. The temperature coefficient of the bubble collapse field is -0.24 to 0%/.degree. C., and the operating characteristics are remarkably excellent, therefore, this garnet film is suitable for the small bubbles with a diameter smaller than or equal to 1 .mu.m.

## Claims

### Claim 1

A garnet film on a substrate, for a magnetic bubble element, said garnet film having such a composition as is expressed by a general formula of (LaLu).sub.3-x-y Sm.sub.x Gd.sub.y Fe.sub.5-z Ga.sub.z O.sub.12, wherein: 0.3.ltoreq.x.ltoreq.1.0; 0.2.ltoreq.y.ltoreq.1.0; and 0.0.ltoreq.z.ltoreq.0.8, said substrate being a single-crystalline substrate of Gd.sub.3 Ga.sub.5 O.sub.12, and said garnet film being epitaxially grown on the (111) surface of the single-crystalline substrate of Gd.sub.3 Ga.sub.5 O.sub.12.

### Claim 2 (depends on 1)

A garnet film on a substrate as set forth in claim 1, wherein said garnet film has a thickness of about 10 to 0.3 .mu.m.

### Claim 3 (depends on 2)

A garnet film on a substrate as set forth in claim 2, wherein the film thickness is 2.5-0.3 .mu.m.
