# US 4,397,884 A · Process for stabilizing in time a piezoelectric resonator

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- Number: US 4,397,884 A
- Document ID: US4397884A
- Status: Granted
- Kind: A
- Application number: 06/323,075
- Filed: 1981-11-19
- Granted: 1983-08-09
- Earliest claimed: 1980-11-21
- Assignees: Compagnie d'Electronique et de Piezo-Electricite
- Inventors: Georges Dube
- Web page: https://patentgrep.com/patent/US4397884A

## CPC

- H03H 3/04: for obtaining desired frequency or temperature coefficient
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)

## Abstract

The invention relates to piezoelectric resonators formed from a block of a crystalline material. During finishing of such resonators, some of the faces thereof, the distances between which define the frequency, are subjected to abrasive operations which alter the surface state of the network, with surface cracks, dislocations and fragmentations. The invention provides a process for implanting light ions on these faces (He, Li, Be) after finishing, by creating therein a layer of vitreous protection silica from the crystallized quartz.

## Claims

### Claim 1

A process for forming a piezoelectric resonator which has time stabilized oscillation characteristics comprising the steps of:
forming a block of material in the crystalline state;
performing mechanical finishing operations on said block of crystalline material;
subjecting at least one face of said block of crystalline material to ion implantation wherein said ions are one of helium, lithium and beryllium in order to transform said crystalline material on said at least one face of said block to the vitreous state to a predetermined depth of less than 1 micron.

### Claim 2 (depends on 1)

The process according to claim 1 wherein two opposite faces of said block of crystalline material are subjected to ion implantation prior to covering each of said implanted faces with a respective electrode.

### Claim 3 (depends on 2)

The process according to claim 2 including the further step of heating said block having the transformed faces to a temperature less than the curie point of said material.

### Claim 4 (depends on 1)

The process according to claim 1 wherein said ion implantation is accomplished by a beam of ions having a density of approximately 1.5.times.10.sup.16 ions per square meter and the acceleration voltage is less than 200 kV.

### Claim 5 (depends on 1)

The process according to claim 1 wherein the steps of ion implantation and transformation include the further steps of:
disposing said block of material in a vacuum bell jar;
subjecting the upper face of said block to an ion beam for approximately 10 minutes; and
turning said block of material over and subjecting the lower face to said ion beam for approximately 10 minutes.

### Claim 6 (depends on 1)

The process according to claim 1 wherein said material in the crystalline state is one of quartz lithium tantalate and lithium niobate.

### Claim 7 (depends on 1)

The process according to claim 1 wherein said material is lithium tantalate.

### Claim 8 (depends on 1)

The process according to claim 1, wherein said material is lithium niobate.