# US 4,397,078 A · Method and apparatus for measuring a gap distance between a mask and a wafer to be used in fabrication of semiconductor integrated circuits

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- Number: US 4,397,078 A
- Document ID: US4397078A
- Status: Granted
- Kind: A
- Application number: 06/289,199
- Filed: 1981-08-03
- Granted: 1983-08-09
- Earliest claimed: 1980-08-11
- Assignees: Telmec Co., Ltd.
- Inventors: Issei Imahashi
- Web page: https://patentgrep.com/patent/US4397078A

## CPC

- G03F 9/7053: {Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves}
- G03F 9/703: {Gap setting, e.g. in proximity printer}
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- Y10S 438/943: Movable
- Y10S 438/975: Substrate or mask aligning feature
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

On a mask to be used in fabrication of semiconductor integrated circuits is formed an electrode outside of an integrated circuit pattern area with the same material as said pattern area in the same thickness as said pattern area, this mask is positioned above a wafer as separated therefrom at a minute gap distance, and the gap distance between the mask and the wafer is measured by detecting an electrostatic capacitance between the electrode and the wafer.

## Claims

### Claim 1

A method for measuring a gap distance between a mask and a wafer to be used in fabrication of semiconductor integrated circuits, characterized by the steps of forming an electrode on a mask having a pattern of a semiconductor integrated circuit, positioning said mask as spaced from a wafer at a certain gap distance, and measuring said gap distance between said mask and said wafer by detecting an electrostatic capacitance between said electrode and said wafer.

### Claim 2

An apparatus for measuring a gap distance between a mask and a wafer to be used in fabrication of semiconductor integrated circuits; characterized in that said apparatus comprises a mask consisting of a substrate and a pattern area for a semiconductor integrated circuit and an electrode formed on the outer surface of said substrate; a holder for holding said mask; a chuck for holding said wafer; and an electrostatic capacitance measuring device electrically connected between said electrode formed on said mask and said wafer.

### Claim 3

A pattern printing apparatus provided with means for measuring a gap distance between a mask and wafer to be used in fabrication of semiconductor integrated circuits; characterized in that said apparatus comprises a mask consisting of a substrate and a pattern area for a semiconductor integrated circuit and an electrode formed on the outer surface of said substrate; a holder for holding said mask; a chuck for holding said wafer; a source of light or X-rays for photo-printing; and an electrostatic capacitance measuring device electrically connected between said electrode formed on said mask and said wafer.

### Claim 4 (depends on 2)

An apparatus for measuring a gap distance between a mask and a wafer to be used in fabrication of semiconductor integrated circuits as claimed in claim 2, further characterized in that said electrode is made of the same material as said pattern area for a semiconductor integrated circuit.

### Claim 5 (depends on 2)

An apparatus for measuring a gap distance between a mask and a wafer to be used in fabrication of semiconductor integrated circuits as claimed in claim 2, further characterized in that said electrode is formed in the same thickness as said pattern area for a semiconductor integrated circuit.

### Claim 6 (depends on 2)

An apparatus for measuring a gap distance between a mask and a wafer to be used in fabrication of semiconductor integrated circuits as claimed in claim 2, further characterized in that said holder includes a contact member adapted to electrically connect said electrode formed on said mask to said electrostatic capacitance measuring device upon holding said mask on said holder.