# US 4,396,934 A · Corrosion resistant structure for conductor and PSG layered semiconductor device

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- Number: US 4,396,934 A
- Document ID: US4396934A
- Status: Granted
- Kind: A
- Application number: 06/229,748
- Filed: 1981-01-29
- Granted: 1983-08-02
- Earliest claimed: 1980-01-31
- Assignees: Sanyo Electric Co., Ltd.
- Inventors: Masanori Nishida; Shigeo Ootani
- Web page: https://patentgrep.com/patent/US4396934A

## CPC

- H10W 20/48: Insulating materials thereof
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device comprises an oxide film and a polysilicon electrode formed in succession on a semiconductor substrate, and a phosphor silicate glass layer formed on the polysilicon electrode and the oxide film and having the smoothed surface. An aluminum electrode is formed on the phosphor silicate glass. A nitride film is formed on the aluminum electrode and the phosphor silicate glass layer, for example, by a chemical vapor deposition process, so as to completely cover the phosphor silicate glass layer.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor substrate of one conductivity type,
an oxide film formed on one main surface of said semiconductor substrate,
drain and source regions of the conductivity type opposite to that of said semiconductor substrate formed in said semiconductor substrate adjoining said main surface,
a first electrode formed on said oxide film and serving as a gate electrode,
a phosphorous silicate glass layer formed on said first electrode and said oxide film and having a surface smoothed,
a second electrode formed on said phosphorous silicate glass serving as contacts of said drain and source regions, and
a nitride film formed on said phosphorous silicate glass layer, said second electrode and said oxide film,
a scribing line being formed on said semiconductor substrate to encompass said semiconductor device,
said oxide film extending to the vicinity of said scribing line,
the end portion of said phosphorous silicate glass layer formed on said oxide film extending to the vicinity of said scribing line being positioned inside the end portion of said oxide film and the end portion of said nitride film being positioned on said oxide film between the end portion of said phosphorous silicate glass layer and said scribing line, said phosphorous silicate glass layer being completely covered through close contact of said nitride film with said oxide film.

### Claim 2 (depends on 1)

A semiconductor device in accordance with claim 1, wherein
said second electrode comprises a bonding pad portion
and an end portion, said bonding pad portion having said nitride film removed therefrom, whereby said electrode end portion and said phosphorous silicate glass end portion are covered completely by said nitride layer.

### Claim 3 (depends on 1)

A semiconductor device in accordance with claim 1, wherein a plurality of MOS elements are provided each including said drain and source regions and said first and second electrodes,
said first and second electrodes being disposed to interconnect said MOS elements.

### Claim 4 (depends on 1)

A semiconductor device in accordance with claim 1, wherein
said first electrode is made of a member selected from the group consisting of polysilicon, molybdenum silicide and tungsten silicide.

### Claim 5 (depends on 1)

A semiconductor device in accordance with claim 1, wherein
said second electrode is made of a member selected from the group consisting of aluminum and molybdenum.