# US 4,396,932 A · Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other

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- Number: US 4,396,932 A
- Document ID: US4396932A
- Status: Granted
- Kind: A
- Application number: 06/288,861
- Filed: 1981-07-31
- Granted: 1983-08-02
- Earliest claimed: 1978-06-16
- Assignees: Motorola, Inc.
- Inventors: Paul G. Alonas; David M. Gilbert; Vernon P. O'Neil, II
- Web page: https://patentgrep.com/patent/US4396932A

## CPC

- H10F 39/103: {the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors}
- H03K 17/79: controlling {bipolar} semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
- H10D 18/80: Bidirectional devices, e.g. triacs
- H10D 84/403: {Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A monolithic light-activated line-operable zero-crossing switch and method of making the same. The device comprises anti-parallel thyristors, each of whose gates is shunted by a field effect transistor. Each device may also be shunted by a resistor to reduce the overall sensitivity. The method of making the device contemplates surrounding the field effect transistor gate electrode and an internal shunt electrode by the primary metallization which forms the contact to the two main terminals of the device.

## Claims

### Claim 1

A monolithic bi-directional thyristor switch with two power terminals, comprising:
a first vertical transistor having an emitter, a base, and a collector region;
a first lateral transistor of opposite type to said first vertical transistor and having an emitter, a base, and a collector region, and wherein said base region of said first vertical transistor and said collector region of said first lateral transistor are common, and said collector region of said first vertical transistor and said base region of said first lateral transistor are common, and wherein said first lateral transistor and first vertical transistor form a first thyristor wherein said emitter region of said first lateral transistor forms a first terminal of said first thyristor, said emitter region of said first vertical transistor forms a second terminal of said first thyristor, and said base region of said vertical transistor forms a gate of said first thyristor;
a second vertical transistor of the same type as said first vertical transistor and having an emitter, a base, and a collector region;
a second lateral transistor of opposite type to said second vertical transistor, and having an emitter, a base, and a collector region, and wherein said base region of said second vertical transistor and said collector region of said second lateral transistors are common, and said collector region of said second vertical transistor and said base region of said second lateral transistor are common, and wherein said second lateral transistor and second vertical transistor form a second thyristor wherein said emitter region of said second vertical transistor forms a first terminal of said second thyristor, said emitter region of said second lateral transistor forms a second terminal of said second thyristor, and said base region of said vertical transistor forms a gate of said second thyristor;
wherein said collector regions of said first and second vertical transistors form a common semiconductor region;
wherein said emitter region of said first lateral transistor is located between said emitter region and said collector region of said second lateral transistor, and said emitter region of said second lateral transistor is located between said emitter region and collector region of said first lateral transistor; and
wherein said first terminal of said first thyristor is coupled to said first terminal of said second thyristor and said second terminal of said first thyristor is coupled to said second terminal of said second thyristor, said coupled terminals forming said two power terminals of said bi-directional switch.

### Claim 2 (depends on 1)

The bi-directional switch of claim 1 wherein each of said two power terminals of said bi-directional switch comprises a metal region that substantially overlies but is space apart from semiconductor junctions penetrating to a surface of said bi-directional switch directly beneath said metal region, wherein a first overlying metal region substantially covers a first junction formed between said base and said collector regions of said first vertical transistor and between said emitter and said base regions of said second lateral transistor, and wherein a second overlying metal region substantially covers a second junction formed between said base and said collector regions of said second vertical transistor and between said emitter and base regions of said first lateral transistor, each overlying metal region forming a substantially equipotential region modifying a junction electric field so as to increase blocking voltages of said junctions.

### Claim 3

In a two terminal light activated triac switch formed from a back-to-back thyristor pair, each thyristor formed from a coupled vertical and lateral transistor complementary pair, each transistor having an emitter, a base, and a collector region, the improvement comprising:
emitter and collector regions of each of said lateral transistors disposed so that each emitter region of one lateral transistor lies between an emitter and a collector region of another lateral transistor.

### Claim 4 (depends on 3)

The switch of claim 3 wherein said collector regions of said vertical transistors and said base regions of said lateral transistors form a common substrate region.

### Claim 5 (depends on 4)

The switch of claim 4 wherein said emitter regions of said lateral transistors are arranged in substantially parallel spaced apart relationship.

### Claim 6 (depends on 5)

The switch of claim 5 wherein emitter-collector pairs operating at substantially the same potential are formed from an emitter of one lateral transistor and a collector of another lateral transistor placed in a substantially parallel spaced apart relationship, and wherein each emitter-collector pair has a first conductivity type and forms a p-n junction with said common substrate region, said common substrate having a second conductivity type, and wherein each said p-n junction has a boundry with a surface of said switch which is substantially covered by a metallic field distributing conductor so as to enhance the blocking voltage of each said junction.

### Claim 7

A two terminal monolithic bi-directional thyristor switch comprising:
two anti-parallel pairs of coupled transistors, each having an emitter, base, and collector, wherein each of the pairs of coupled transistors is formed from a vertical and a lateral transistor, wherein a base of each of the coupled transistors of the pair is common with a collector of the other of the same pair, wherein the collectors of the vertical transistors of the pairs are disposed in a common semiconductor region, and wherein the emitters and collectors of the lateral transistors are disposed so that each emitter of one lateral transistor lies between the emitter and collector of the other lateral transistor.

### Claim 8

A two terminal monolithic bidirectional thyristor switch comprising:
two anti-parallel pairs of coupled transistors each having an emitter, a base, and a collector region;
two field effect transistors each having a source, a drain, and a gate region;
wherein each of the pairs of coupled transistors is formed from a vertical transistor of one conductivity type and a lateral transistor of the opposite conductivity type;
wherein a base region of each of the coupled transistors of the pair is common with a collector region of the other transistor of the same pair;
wherein the emitter regions and collector regions of the lateral transistors are disposed so that each emitter region of one lateral transistor lies between the emitter region and collector region of the other lateral transistor;
wherein the collector regions of the vertical transistors form a common semiconductor region; and
wherein the source and drain regions of each field effect transistor are connected across the base and emitter regions of each vertical transistor forming one member of each pair of coupled transistors, and the gate regions of the field effect transistors are each connected to the emitter or base region of the lateral transistor forming the other member of each pair of coupled transistors.