# US 4,396,929 A · Gallium nitride light-emitting element and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 4,396,929 A - Document ID: US4396929A - Status: Granted - Kind: A - Application number: 06/199,097 - Filed: 1980-10-20 - Granted: 1983-08-02 - Earliest claimed: 1979-10-19 - Assignees: Matsushita Electric Industrial Co., Ltd. - Inventors: Yoshimasa Ohki; Yukio Toyoda; Hiroyuki Kobayashi; Isamu Akasaki - Web page: https://patentgrep.com/patent/US4396929A ## CPC - H10H 20/8215: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping} - H10H 20/818: within the light-emitting regions - H10H 20/032: {of electrodes} - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W 90/726: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting. ## Claims ### Claim 1 A light-emitting diode chip comprising: (a) a single crystal substrate having a rough area at a given position in one surface thereof; (b) a conductive gallium nitride layer formed on said surface of said substrate; (c) a semi-insulating galluim nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity; (d) a high conductivity gallium nitride region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said rough area, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conductive gallium nitride layer and said semi-insulating gallium nitride layer being formed by a single epitaxial growth; and (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer. ### Claim 2 (depends on 1) A light-emitting diode chip as claimed in claim 1, wherein said rough area is an undulatory portion. ### Claim 3 (depends on 1) A light-emitting diode chip as claimed in claim 1, wherein said rough area comprises one groove or more made on the surface of said substrate. ### Claim 4 (depends on 1) A light-emitting diode chip as claimed in claim 1, wherein said rough area has a strip-like shape. ### Claim 5 A light-emitting diode chip comprising: (a) a single crystal substrate having an insulating film at a given position in one surface thereof; (b) a conductive gallium nitride layer formed on said surface of said substrate; (c) a semi-insulating gallium nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity; (d) a high conductivity region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said insulating film, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conconductive gallium nitride layer and said semi-insulating gallium nitride layer being formed by a single epitaxial growth; and (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer. ### Claim 6 (depends on 1, 5) A light-emitting diode chip as claimed in claim 1 or 5, wherein said high conductivity region is formed along the peripheral portion of said light-emitting diode chip. ### Claim 7 (depends on 1, 5) A light-emitting diode chip as claimed in claim 1 or 5, wherein said high conductivity region is formed at a position surrounding by said semi-insulating layer. ### Claim 8 (depends on 1, 5) A light-emitting diode chip as claimed in claim 1 or 5, wherein said high conductivity region is formed between portions of said semi-insulating layer. ### Claim 9 (depends on 1, 5) A light-emitting diode chip as claimed in claim 1 or 5, further comprising another high conductivity region formed integrally with said conductive gallium nitride layer, said another conductivity region being formed along the peripheral portion of said light-emitting diode chip. ### Claim 10 (depends on 1, 5) A light-emitting diode chip as claimed in claim 1 or 5, wherein said high conductivity region comprises an irregularly grown layer. ### Claim 11 (depends on 1, 5) A light-emitting diode chip as claimed in claim 1 or 5, wherein said high conductivity region comprises a polycrystalline. ### Claim 12 (depends on 1, 5) A light-emitting diode chip as claimed in claim 1 or 5, wherein said substrate is made of a semiconductor. ### Claim 13 (depends on 1, 5) A light-emitting diode chip as claimed in claim 1 or 5, wherein said substrate is made of an insulating material. ### Claim 14 (depends on 1, 5) A light-emitting diode chip as claimed in claim 1 or 5, wherein said substrate is transparent. ### Claim 15 (depends on 1, 5) A light-emitting diode chip as claimed in claim 1 or 5, wherein said substrate is made of sapphire. ### Claim 16 A light-emitting diode chip comprising: (a) a single crystal substrate having a rough area at a given position in one surface thereof; (b) a conductive gallium nitride layer formed on said surface of said substrate; (c) a semi-insulating gallium nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity; (d) a high conductivity gallium nitride region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said rough area, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conductive gallium nitride layer and said semi-insulating gallium nitride layer being formed by a single epitaxial growth; (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer; and (f) a stem assembly having first and second stem electrodes and an insulator for insulating said first and second stem electrodes from each other, said first and second electrodes being respectively mounted on said first and second stem electrode. ### Claim 17 A light-emittng diode chip comprising: (a) a single crystal substrate having an insulating film at a given position in one surface thereof; (b) a conductive gallium nitride layer formed on said surface of said substrate; (c) a semi-insulating gallium nitride layer formed on said conductive gallium nitride layer, said semi-insulating gallium nitride layer including an impurity; (d) a high conductivity region formed on said conductive gallium nitride layer, said high conductivity region being formed at a position corresponding to said insulating film, and extending to the level of the upper surface of said semi-insulating gallium nitride layer, said high conductivity region being simultaneously formed when said semi-insulating gallium nitride layer is formed to include said impurity, and having a conductance greater than that of the conductive gallium nitride layer, both said conductive gallium nitride layer and said semi-insulating gallium layer being formed by a single epitaxial growth; (e) first and second electrodes respectively formed on said high conductivity region and said semi-insulating gallium nitride layer; and (f) a stem assembly having first and second stem electrodes and an insulator for insulating said first and second stem electrodes from each other, said first and second electrodes being respectively mounted on said first and second stem electrodes. ### Claim 18 (depends on 16, 17) A light-emitting diode as claimed in claim 16 or 17, further comprising a packaging having a lens.