# US 4,396,641 A · Method for improving surface properties of shaped articles of synthetic resins

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- Number: US 4,396,641 A
- Document ID: US4396641A
- Status: Granted
- Kind: A
- Application number: 06/299,182
- Filed: 1981-09-03
- Granted: 1983-08-02
- Earliest claimed: 1980-09-08
- Assignees: Shin-Etsu Chemical Co., Ltd.
- Inventors: Kiyoshi Imada; Susumu Ueno; Hirokazu Nomura
- Web page: https://patentgrep.com/patent/US4396641A

## CPC

- C08J 7/123: {Treatment by wave energy or particle radiation (C08J7/18 takes precedence)}
- C08J 7/126: {Halogenation}
- C08J: WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H (working, e.g. shaping, of plastics B29)

## Abstract

The invention provides a novel and efficient method for the improvement of the surface properties of a shaped article of a synthetic resin such as a vinyl chloride-based resin. In particular, the outstanding defective point of the plastic resin articles toward accumulation of static electricity on the surface is greatly reduced by the inventive method, in which the surface of the article is exposed to the low temperature plasma generated in a gaseous atmosphere containing an organic silicon compound followed, preferably, by contacting treatment with a halogen or a halogen compound such as hydrogen halides and halogen-containing organic compounds in a gaseous phase. The organic silicon compound in the gaseous plasma atmosphere is preferably diluted with a diluent gas which may be nitrogen, nitrogen oxides, ammonia or rare gases at a specified partial pressure.

## Claims

### Claim 1

A method for modifying the surface properties of a shaped article of a synthetic resin which comprises exposing the surface of the shaped article to a low temperature plasma generated in a gaseous atmosphere containing the vapor of an organic silicon compound at a pressure in the range from 0.001 Torr to 10 Torr and then contacting the surface with a halogen or a halogen compound selected from the class consisting of hydrogen haldides and organic halogen compounds.

### Claim 2 (depends on 1)

The method as claimed in claim 1 wherein the organic silicon compound is diluted with a diluent gas selected from the class consisting of nitrogen, inorganic nitrogen-containing compounds and rare gases so that the gaseous atmosphere has a partial pressure of the organic silicon compound and a partial pressure of the diluent gas in the range from 0.0001 Torr to 10 Torr and in the range from 0.0001 Torr to 10 Torr, respectively.

### Claim 3 (depends on 1)

The method as claimed in claim 1 wherein the organic silicon compound is a compound having at least one functional atom or group bonded to the silicon atom directly or through a divalent hydrocarbon group.

### Claim 4 (depends on 3)

The method as claimed in claim 3 wherein the functional atom directly bonded to the silicon atom is a hydrogen atom or a halogen atom.

### Claim 5 (depends on 3)

The method as claimed in claim 3 wherein the functional group directly bonded to the silicon atom is selected from the class consisting of a hydroxy group, alkoxy group, acyloxy group, alkenyl group and alkynyl group.

### Claim 6 (depends on 3)

The method as claimed in claim 3 wherein the functional group bonded to the silicon atom through a divalent hydrocarbon group is selected from the class consisting of an amino group, methacryloxy group, mercapto group and epoxy group.

### Claim 7 (depends on 3)

The method as claimed in claim 3 wherein the organic silicon compound has at least two functional atoms or groups bonded to the silicon atom or atoms each directly or through a divalent hydrocarbon group.

### Claim 8 (depends on 2)

The method as claimed in claim 2 wherein the inorganic nitrogen-containing compound is selected from the class consisting of nitric oxide, nitrogen dioxide and ammonia.

### Claim 9 (depends on 1)

The method as claimed in claim 1 wherein the organic halogen compound is selected from the class consisting of n-propyl fluoride, methyl chloride, methyl bromide, allyl chloride, vinyl chloride, vinyl bromide, isopropenyl chloride, 1,1,2-trifluoroethane, 1,1-dichloroethane, chloroform and carbon tetrachloride.

### Claim 10 (depends on 1)

The method as claimed in claim 1 wherein the surface of the shaped article of the synthetic resin is contacted with the halogen or halogen compound in a gaseous phase.

### Claim 11 (depends on 10)

The method as claimed in claim 10 wherein the halogen or halogen compound in the gaseous phase has a pressure of at least 10 Torr.