# US 4,396,438 A · Method of making CCD imagers

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- Number: US 4,396,438 A
- Document ID: US4396438A
- Status: Granted
- Kind: A
- Application number: 06/297,924
- Filed: 1981-08-31
- Granted: 1983-08-02
- Earliest claimed: 1981-08-31
- Assignees: RCA Corporation
- Inventors: Alvin M. Goodman
- Web page: https://patentgrep.com/patent/US4396438A

## CPC

- H10F 39/158: {having arrangements for blooming suppression}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

The preferred embodiment of the invention disclosed herein provides a CCD imager with reduced striation contrast in its displayed image. The wafer on which the imager is to be formed is lightly doped with atoms of one conductivity type. Before forming the various regions of the imager in the wafer, a layer is first doped with atoms of the same conductivity type so as to have a substantially uniform lateral concentration. This is preferably accomplished by ion implantation and diffusion techniques. Thereafter, an imager is formed in this layer in accordance with any desired technique.

## Claims

### Claim 1

A method of making a CCD imager having a photosensing register on a semiconductor wafer initially doped with atoms of one conductivity type, the method comprising:
doping a layer of material adjacent one major surface of said wafer which includes at least the entire portion of the surface containing the photosensing register with a substantially uniform lateral concentration of atoms of said one conductivity type;
doping regions of said layer with conductivity type determining atoms to provide channels along which charge can be transferred;
providing a channel oxide layer over said major surface; and
providing a plurality of generally parallel electrodes extending generally transverse to said channels over said channel oxide layer.

### Claim 2 (depends on 1)

A method in accordance with claim 1 wherein said doping of said layer includes implanting ions of said one conductivity type a predetermined depth into said wafer.

### Claim 3 (depends on 2)

A method in accordance with claim 2 wherein said doping of said layer further includes diffusing the implanted ions deeper into said wafer.

### Claim 4 (depends on 1)

A method in accordance with claim 1 wherein said doping to form said channels includes the doping of first regions of said layer with atoms of said one conductivity type to form channel stops.

### Claim 5 (depends on 4)

A method in accordance with claim 4 wherein said doping to form said channels includes the doping of portions of said first regions of said layer with atoms of the opposite conductivity type to form drains.

### Claim 6 (depends on 4, 5)

A method in accordance with claims 4 or 5 wherein said doping to form said channels includes the doping of a portion of said layer adjacent said major surface with atoms of the opposite conductivity type to form buried channel regions.

### Claim 7 (depends on 4, 6)

A method in accordance with claims 4 or 6 wherein said doping to form said channels is accomplished by implanting ions a predetermined distance into said layer.