# US 4,395,769 A · Tunable semiconductor laser

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- Number: US 4,395,769 A
- Document ID: US4395769A
- Status: Granted
- Kind: A
- Application number: 06/240,206
- Filed: 1981-03-03
- Granted: 1983-07-26
- Earliest claimed: 1981-03-03
- Assignees: Bell Telephone Laboratories, Incorporated
- Inventors: Theodoor C. Damen; Michel A. Duguay
- Web page: https://patentgrep.com/patent/US4395769A

## CPC

- H01S 5/041: {Optical pumping}
- H01S 5/18358: {containing spacer layers to adjust the phase of the light wave in the cavity}
- H01S 3/1026: {Controlling the active medium by translation or rotation, e.g. to remove heat from that part of the active medium that is situated on the resonator axis}
- H01S 5/1039: {Details on the cavity length}
- H01S 5/106: {varying thickness along the optical axis}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

Tunable laser radiation is obtained by pumping a wedge-shaped ultra-short laser cavity with picosecond excitation pulses. Continuous tuning of the laser is achieved by translating either the wedge-shaped laser cavity or the excitation pulses so that different volumes of the laser material are exposed to the excitation pulses. In one embodiment utilizing picosecond laser excitation pulses the wedge-shaped laser cavity is a slightly wedged film of GaAs coated on both sides with dielectric mirrors.

## Claims

### Claim 1

A laser which comprises:
a thin film (1) of semiconductor material disposed between mirrors (2 and 3) and
excitation means (15 and 16) for producing a population inversion in a predetermined volume of said semiconductor material
characterized in that
said thin film has a variation in thickness from a first end to a second end thereof and said excitation means provides high intensity excitation pulses having an ultra-short time duration, the time duration of said excitation pulse being less than or substantially equal to one picosecond, said thickness of said semiconductor material being less than or substantially equal to the distance at which the electron-hole plasma produced by said excitation pulse fills substantially all of said thickness of said material in said time duration, and at least one of said mirrors comprises at least one layer of material having a variation in thickness from a first end to a second end thereof.

### Claim 2 (depends on 1)

A laser in accordance with claim 1 wherein said excitation means comprises means (15 and 16) for providing laser radiation, which laser radiation produces said population inversion.

### Claim 3 (depends on 2)

A tunable laser in accordance with claim 2 which further comprises:
means (7, 8, 9 and 10) for adjusting the position of said semiconductor material in such a manner that different predetermined volumes of said semiconductor material are exposed to said laser radiation, whereby said laser provides tunable laser output radiation.

### Claim 4 (depends on 2)

A tunable laser in accordance with claim 2 which further comprises:
means (399, 401-404) for adjusting the direction of said laser radiation in such a manner that different predetermined volumes of said semiconductor material are exposed to said laser radiation, whereby said laser provides tunable laser output radiation.

### Claim 5 (depends on 3, 4)

A tunable laser in accordance with claim 3 or 4 wherein said laser material is GaAs.

### Claim 6 (depends on 5)

A tunable laser in accordance with claim 5 wherein said laser material is a wedge having a thickness substantially equal to 0.9.mu. at one end of said wedge and a thickness substantially equal to 1.02.mu. at the other end of said wedge.

### Claim 7

A laser which comprises:
a first thin film (17) of semiconductor material having sides which are substantially parallel and a thickness less than or substantially equal to 1 .mu.m, said film being disposed between a first mirror (31) and a second mirror (32), said first and second mirrors being substantially parallel;
a second thin film (49) of semiconductor material having a variation in thickness from a first end and a second end thereof less than or substantially equal to 1 .mu.m, said second thin film being disposed between said second mirror and a third mirror (33), said third mirror comprises at least one layer of material having a variation in thickness from a first end and a second end thereof; and
excitation means (15 and 16) for producing a population inversion in a predetermined volume of the semiconductor material of said first thin film, said excitation means provides high intensity excitation pulses of time duration less than or substantially equal to 10 picoseconds.

### Claim 8 (depends on 7)

A laser in accordance with claim 7 wherein said excitation means comprises means (15 and 16) for producing laser radiation, which laser radiation produces said population inversion.

### Claim 9 (depends on 8)

A tunable laser in accordance with claim 8 which further comprises:
means (7, 8, 9 and 10) for adjusting the position of said first and second thin film so that different predetermined volumes of said first thin film of semiconductor material are exposed to said laser radiation, whereby said laser provides tunable laser output.

### Claim 10 (depends on 8)

A tunable laser in accordance with claim 8 which further comprises:
means (399, 401-404) for adjusting the direction of said laser radiation in such a manner that different predetermined volumes of said first thin film of semiconductor material are exposed to said laser radiation, whereby said laser provides tunable laser output.

### Claim 11 (depends on 9, 10)

A tunable laser in accordance with claim 9 or 10 wherein said first thin film and said second thin film of semiconductor material are GaAs and said second thin film is a wedge having a thickness substantially equal to 0.9.mu. at one end of said wedge and a thickness substantially equal to 1.02.mu. at the other end of said wedge.

### Claim 12 (depends on 1)

A laser in accordance with claim 1 which further comprises:
a film (50) of material substantially transparent to laser radiation output from said thin film, said film being disposed between the second mirror and a third mirror (51), said film having a second variation in thickness from a first end to a second end thereof, said second variation in thickness being larger than said variation in thickness and said variation in thickness and second variation in thickness being proportional to each other along the lengths of said thin film and said film.

### Claim 13 (depends on 12)

A laser in accordance with claim 12 wherein said third mirror comprises at least one layer of material having a variation in thickness from a first end to a second end thereof.

### Claim 14 (depends on 13)

A laser in accordance with claim 13 wherein said excitation means comprises means (15 and 16) for providing laser radiation, which laser radiation produces said population inversion.

### Claim 15 (depends on 14)

A tunable laser in accordance with claim 14 which further comprises:
means (7, 8, 9 and 10) for adjusting the position of said semiconductor material in such a manner that different predetermined volumes of said semiconductor material are exposed to said laser radiation, whereby said laser provides tunable laser output radiation.

### Claim 16 (depends on 14)

A tunable laser in accordance with claim 14 which further comprises:
means (399, 401-404) for adjusting the direction of said laser radiation in such a manner that different predetermined volumes of said semiconductor material are exposed to said laser radiation, whereby said laser provides tunable laser output radiation.