# US 4,395,725 A · Segmented channel field effect transistors

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- Number: US 4,395,725 A
- Document ID: US4395725A
- Status: Granted
- Kind: A
- Application number: 06/196,384
- Filed: 1980-10-14
- Granted: 1983-07-26
- Earliest claimed: 1980-10-14
- Inventors: Rajesh H. Parekh
- Web page: https://patentgrep.com/patent/US4395725A

## CPC

- H10D 62/307: {the doping variations being parallel to the channel lengths}
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10D 62/299: {having lateral doping variations (IGFETs having lightly doped source or drain extensions H10D30/601)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method for the fabrication of field effect transistors with conduction channels divided into a plurality of segments, each implanted to conduct at various threshold voltages. Field effect transistors, heretofore essentially digital switching devices, may thus be fabricated for use in circuits wherein variations in applied gate voltages can result in three or more stable current levels or transistors may be designed to provide various electrical output characteristics such as that required for analog circuits, fast EPROMs, high density ROMs, etc.

## Claims

### Claim 1

A segmented channel field effect transistor including a substrate, separated source and drain pockets adjoining one surface of said substrate, a current conduction channel bridging the separation between said source and drain pockets and having a length corresponding to said separation and a width corresponding to the widths of said source and drain pockets adjacent said conduction channel, and a gate element overlying said channel and electrically insulated therefrom, the current conduction channel of said transistor having therein a plurality of segments each implanted to conduct at a unique threshold voltage, at least one of said plurality of segments bridging the width of said channel adjacent one of said pockets and narrowing in width as said segment extends along the length of said channel.

### Claim 2 (depends on 1)

The segmented channel field effect transistor claimed in claim 1 wherein a first one of said plurality of segments bridges the length and width of said current conduction channel and a second one of said plurality has a substantially triangular configuration one leg of which bridges the width of said channel adjacent one of said source and drain pockets, said second segment narrowing in width as it extends through the length of said channel.

### Claim 3 (depends on 2)

The segmented channel field effect transistor claimed in claim 2 wherein said triangular second segment has a maximum width adjacent a first one of said source and drain pockets at a first end of said conduction channel the width of said second segment narrowing to a zero width at the second end of said channel adjacent the second one of said pockets.